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Substrate hole current generation and oxide breakdown in Si MOSFETs under Fowler-Nordheim electron tunneling injection Fowler-Nordheim电子隧穿注入下Si mosfet衬底空穴电流的产生和氧化物击穿
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347339
H. Satake, A. Toriumi
{"title":"Substrate hole current generation and oxide breakdown in Si MOSFETs under Fowler-Nordheim electron tunneling injection","authors":"H. Satake, A. Toriumi","doi":"10.1109/IEDM.1993.347339","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347339","url":null,"abstract":"The breakdown mechanism in thin gate oxides is proposed based on the measured substrate hole current and on the temperature-dependent hole-fluence-to-breakdown through gate oxides. From the experimental results and calculation, it is clarified that the hole generation in the gate electrode is a most promising mechanism in thin gate oxides. Moreover, it has been demonstrated for the first time that the hole-fluence-to-breakdown is not a constant value for different oxide fields but has a strong oxide field dependence at low temperatures. Based on the experimental results, we propose a model in which the oxide breakdown is a structural change initiated by hole trapping.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"313 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114958308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors InP/GaInAs异质结构双极晶体管的弹道输运效应
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347278
A. Reygenson, O.A. Menin, P.R. Smith, R. Hamm, R. Montgomery, R.D. Yadvish, D. Ritter, M. Haner
{"title":"Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors","authors":"A. Reygenson, O.A. Menin, P.R. Smith, R. Hamm, R. Montgomery, R.D. Yadvish, D. Ritter, M. Haner","doi":"10.1109/IEDM.1993.347278","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347278","url":null,"abstract":"The electron transport mechanism in the base (p=5/spl times/10/sup 19/cm/sup -3/) of GaInAs/InP heterojunction bipolar transistor was studied by the Monte Carlo method using the dielectric function response method. The self-consistent treatment included elastic and inelastic electron scattering. The room temperature transport was identified as ballistic for the base width less than 500 /spl Aring/. For the base width in the range of 500-2000 /spl Aring/ there are both ballistic and quasiballistic (hot electron diffusion) transport mechanisms. For the base width greater than 2000 /spl Aring/ we observe transport of thermalized electrons with long transit times. These results correlate well with the experimentally measured base delay times.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128392078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Initial tests of a high power, broadband, harmonic gyroTWT 高功率、宽带、谐波陀螺行波管的初步试验
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347335
W. DeHope, K. Felch, G. Hu, M. Mizuhara, J. Neilson, P. Reysner, R. Schumacher, B. Stockwell, A. Baikcum, C. Chong, N. Luhmann, D. Mcdermott
{"title":"Initial tests of a high power, broadband, harmonic gyroTWT","authors":"W. DeHope, K. Felch, G. Hu, M. Mizuhara, J. Neilson, P. Reysner, R. Schumacher, B. Stockwell, A. Baikcum, C. Chong, N. Luhmann, D. Mcdermott","doi":"10.1109/IEDM.1993.347335","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347335","url":null,"abstract":"The design of a high power, 95 GHz 3rd harmonic gyrotron amplifier with wide bandwidth is described and test results are presented on a scaled, proof-of-principle experiment. The fabrication of a complete tube is nearly complete, capable of 10% duty operation, with predicted performance of 80 kW peak power at an efficiency of 23% and a bandwidth of 3% about 95 GHz.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134198587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An integral-polepiece folded-waveguide slow-wave circuit for high-power millimeter-wave TWTs 大功率毫米波行波管的整片折叠波导慢波电路
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347378
A. Theiss, D. B. Lyon, Y. Hiramatsu
{"title":"An integral-polepiece folded-waveguide slow-wave circuit for high-power millimeter-wave TWTs","authors":"A. Theiss, D. B. Lyon, Y. Hiramatsu","doi":"10.1109/IEDM.1993.347378","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347378","url":null,"abstract":"There is presently much interest in low-cost, thermally rugged, slow-wave circuits that can be utilized in high power millimeter-wave TWTs. This interest includes both innovations of the design and fabrication of traditional helices and coupled-cavities as well as new circuit concepts. A program to develop a high power Ka-band TWT at Litton EDD resulted in the investigation of a novel, low-cost, lightweight, thermally rugged, integral-polepiece folded-waveguide circuit that seems well suited for millimeter-wave TWTs. Circuits built into experimental Ka-band TWTs produced peak power levels above 800 watts, gain levels of up to 10 dB/in, and average power levels of hundreds of watts.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134580319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
High-performance CMOS with oxidation-planarized twin tubs and one-mask sealed diffusion-junctions 高性能CMOS氧化平面化双管和一个掩膜密封扩散结
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347316
C. Liu, H. Luftman, W. Lin, C. Chang, T. Yang, C. Fu, K. Lee, R. Liu, D.S. Yaney
{"title":"High-performance CMOS with oxidation-planarized twin tubs and one-mask sealed diffusion-junctions","authors":"C. Liu, H. Luftman, W. Lin, C. Chang, T. Yang, C. Fu, K. Lee, R. Liu, D.S. Yaney","doi":"10.1109/IEDM.1993.347316","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347316","url":null,"abstract":"Issues of submicron integration in vertical topography, junction silicide, and contact integrity are summarized. Examples include (1) high cost of twin-tub formation to achieve planarity at tub boundaries, (2) silicide-related nonuniformity or defects on shallow junctions, and (3) coverage of a TiN diffusion barrier layer at bottom corners of contact windows. We present a simple process to attack the issues. The process requires only ten masks for a full-CMOS integration with two-level metallization. It also improves the integration density and circuit performance.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"1685 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129375361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Practical attenuated phase-shifting mask with a single-layer absorptive shifter of MoSiO and MoSiON for ULSI fabrication 用MoSiO和MoSiON单层吸收移相器制作的实用衰减移相掩模
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347227
N. Yoshioka, J. Miyazaki, H. Kusunose, K. Hosono, M. Nakajima, H. Morimoto, Y. Watakabe, K. Tsukamoto
{"title":"Practical attenuated phase-shifting mask with a single-layer absorptive shifter of MoSiO and MoSiON for ULSI fabrication","authors":"N. Yoshioka, J. Miyazaki, H. Kusunose, K. Hosono, M. Nakajima, H. Morimoto, Y. Watakabe, K. Tsukamoto","doi":"10.1109/IEDM.1993.347227","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347227","url":null,"abstract":"Attenuated phase-shifting mask with a single-layer absorptive shifter with MoSiO or MoSiON films has been developed. These films satisfies the condition both the 180-degree phase shift and the transmittance between 5 and 20%. Conventional mask processes, such as etching, cleaning, defect inspection and defect repair, can be used for the fabrication. Defect-free masks for hole layers of 64 M-bit DRAM have been obtained. Using this mask, the focus depth of 0.35-/spl mu/m hole is improved from 0.6 /spl mu/m to 1.5 /spl mu/m.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125843604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
The trench MOS barrier Schottky (TMBS) rectifier 沟槽MOS势垒肖特基(TMBS)整流器
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347222
M. Mehrotra, B. J. Baliga
{"title":"The trench MOS barrier Schottky (TMBS) rectifier","authors":"M. Mehrotra, B. J. Baliga","doi":"10.1109/IEDM.1993.347222","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347222","url":null,"abstract":"A new rectifier structure, called Trench MOS Barrier Schottky (TMBS) rectifier has been modeled and fabricated with excellent trade-off characteristics. Two-dimensional numerical simulations have demonstrated coupling between the charge in the N/sup -/ drift region and the metal on the trench sidewalls resulting in an improved electric field distribution. For epitaxial layer doping of 1/spl times/10/sup 17/ cm/sup -3/, simulations show that breakdown voltages of three times the plane parallel breakdown can be achieved with low leakage current. The measured forward drops for the 0.5 /spl mu/m devices at 60 A/cm/sup 2/ and 300 A/cm/sup 2/ were 0.2 V and 0.28 V respectively. Due to smaller drift region resistances, TMBS rectifiers can be operated at large current densities (/spl ap/300 A/cm/sup 2/) resulting in small device sizes.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124806122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Self-referenced poly-Si TFT amplifier readout for a linear image sensor 自参考多晶硅TFT放大器读出线性图像传感器
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347234
I. Fujieda, F. Okumura, K. Sera, H. Asada, H. Sekine
{"title":"Self-referenced poly-Si TFT amplifier readout for a linear image sensor","authors":"I. Fujieda, F. Okumura, K. Sera, H. Asada, H. Sekine","doi":"10.1109/IEDM.1993.347234","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347234","url":null,"abstract":"A readout scheme with thin film transistor (TFT) amplifier is proposed for a linear image sensor. Each pixel is provided with a TFT amplifier and additional TFT circuits which allow self-calibration of the amplifier. Prototype sensors were successfully fabricated by the low-temperature poly-Si process utilizing excimer laser annealing.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123925418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Novel HBT structure for high f/sub t/ at low current density 在低电流密度下实现高f/sub - t/的新型HBT结构
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347279
C.E. Chang, P. Asbeck, L. Tran, D. Streit, A. Oki
{"title":"Novel HBT structure for high f/sub t/ at low current density","authors":"C.E. Chang, P. Asbeck, L. Tran, D. Streit, A. Oki","doi":"10.1109/IEDM.1993.347279","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347279","url":null,"abstract":"Through modifications of the epitaxial structure of a GaAs/AlGaAs HBT, the junction capacitance (C/sub be/) and recombination rate in the base-emitter junction region have been substantially reduced. The modified structure leads to both higher f/sub t/ and higher /spl beta/ at low current densities (10/sup 2spl les/J/sub cspl les/10/sup 4/ A/cm/sup 2/). The modifications include a lightly doped emitter (LDE) and a strategically placed /spl delta/-doping layer. Device simulations were used to optimize the LDE length and location of the /spl delta/-doping. The experimental results of a fabricated device with a 1370 /spl Aring/ LDE+/spl delta/-doping yielded a 3.3x reduction in C/sub be/, a 2.7x increase in f/sub t/, and a 2x increase in /spl beta/ over the baseline device at low J/sub c/ (J/sub cspl les/10/sup 3/ A/cm/sup 2/).<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130365003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A monolithic 23.5 to 94 GHz frequency quadrupler using 0.1 /spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs HEMT technology 采用0.1 /spl mu/m伪晶AlGaAs/InGaAs/GaAs HEMT技术的单片23.5至94 GHz频率四倍器
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347357
H. Wang, K. Chang, D. Lo, K. Tan, D. Streit, G. Dow, B. Allen
{"title":"A monolithic 23.5 to 94 GHz frequency quadrupler using 0.1 /spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs HEMT technology","authors":"H. Wang, K. Chang, D. Lo, K. Tan, D. Streit, G. Dow, B. Allen","doi":"10.1109/IEDM.1993.347357","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347357","url":null,"abstract":"A monolithic 23.5 to 94 GHz frequency quadrupler based on 0.1 /spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor technology has been developed. This frequency quadrupler consists of a 23.5 to 47 GHz doubler, a 47 to 94 GHz doubler, and a 47 GHz buffer amplifier between the two doublers. It exhibits a measured conversion loss of 5-7 dB at the output frequency from 94 to 98 GHz. To our knowledge, this is the first reported W-band (75-110 GHz) monolithic frequency quadrupler using HEMT technology. It can be integrated with 23.5 GHz VCOs to construct low phase noise and stable frequency sources around 94 GHz.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127101947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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