Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors

Abstract

The electron transport mechanism in the base (p=5/spl times/10/sup 19/cm/sup -3/) of GaInAs/InP heterojunction bipolar transistor was studied by the Monte Carlo method using the dielectric function response method. The self-consistent treatment included elastic and inelastic electron scattering. The room temperature transport was identified as ballistic for the base width less than 500 /spl Aring/. For the base width in the range of 500-2000 /spl Aring/ there are both ballistic and quasiballistic (hot electron diffusion) transport mechanisms. For the base width greater than 2000 /spl Aring/ we observe transport of thermalized electrons with long transit times. These results correlate well with the experimentally measured base delay times.<>