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Proceedings of IEEE International Electron Devices Meeting最新文献

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A 50-MeV mm-wave electron linear accelerator system for production of tunable short wavelength synchrotron radiation 用于产生可调谐短波同步辐射的50兆电子毫米波电子直线加速器系统
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-31 DOI: 10.1109/IEDM.1993.347373
Alireza Nassiri, R. Kustom, F. E. Mills, Y. W. Kang, A. Feinerman, H. Henke, P. Matthews, T. L. Willke, D. Grudzien, J. Song, D. Horan
{"title":"A 50-MeV mm-wave electron linear accelerator system for production of tunable short wavelength synchrotron radiation","authors":"Alireza Nassiri, R. Kustom, F. E. Mills, Y. W. Kang, A. Feinerman, H. Henke, P. Matthews, T. L. Willke, D. Grudzien, J. Song, D. Horan","doi":"10.1109/IEDM.1993.347373","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347373","url":null,"abstract":"The Advanced Photon Source (APS) at Argonne in collaboration with the University of Illinois at Chicago and the University of Wisconsin at Madison is developing a new millimeter wavelength, 50-MeV electron linear accelerator system for production of coherent tunable wavelength synchroton radiation. Modern micromachining techniques based on deep etch x-ray lithography, LIGA (Lithografie, Galvanoforming, Abformung), capable of producing high-aspect ratio structures are being considered for the fabrication of the accelerating components.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128842174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
0.15 /spl mu/m CMOS with high reliability and performance 0.15 /spl mu/m CMOS，可靠性和性能高
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347259
K. Takeuchi, T. Yamamoto, A. Tanabe, T. Matsuki, T. Kunio, M. Fukuma, K. Nakajima, H. Aizaki, H. Miyamoto, E. Ikawa
{"title":"0.15 /spl mu/m CMOS with high reliability and performance","authors":"K. Takeuchi, T. Yamamoto, A. Tanabe, T. Matsuki, T. Kunio, M. Fukuma, K. Nakajima, H. Aizaki, H. Miyamoto, E. Ikawa","doi":"10.1109/IEDM.1993.347259","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347259","url":null,"abstract":"0.15 /spl mu/m CMOSFETs with high reliability and performance have been realized. The acceptable power supply voltage V/sub cc/ was estimated to be 1.9 V. A reasonably short ring oscillator delay of 33 ps was obtained for the 1.9 V V/sub cc/, maintaining an 0.4 V threshold voltage. Anomalous surface state generation and V/sub TH/ shift for the pMOS were observed, though the degradation was less severe than the nMOS.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114664561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Broadband operation of a two-stage tapered gyro-TWT amplifier 两级锥形陀螺行波管放大器的宽带操作
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347336
G. Park, J.J. Choi, S.Y. Park, C. Armstrong, A. Ganguly, R. Kyser
{"title":"Broadband operation of a two-stage tapered gyro-TWT amplifier","authors":"G. Park, J.J. Choi, S.Y. Park, C. Armstrong, A. Ganguly, R. Kyser","doi":"10.1109/IEDM.1993.347336","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347336","url":null,"abstract":"A two-stage Ka-band gyro-TWT amplifier experiment operating in the TE/sub 10/ rectangular tapered waveguide mode at the fundamental cyclotron frequency is underway at the Naval Research Laboratory. The objective of this program is to demonstrate the stable wideband operation of a low voltage tapered gyro-TWT having high gain and good gain uniformity. Initial experiments operating at 33 kV and 1.5 A have demonstrated a linear gain of 30 d8, saturated gain of 26 dB over an 8% 3 dB-bandwidth, and maximum efficiency of 15%. The operation is compared with theory.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121215147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Current status of the digital micromirror device (DMD) for projection television applications 用于投影电视的数字微镜装置(DMD)的现状
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347329
L. Hornbeck
{"title":"Current status of the digital micromirror device (DMD) for projection television applications","authors":"L. Hornbeck","doi":"10.1109/IEDM.1993.347329","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347329","url":null,"abstract":"This paper describes recent advances in digital micromirror device (DMD) technology for projection television (PTV) applications, including a new device called the hidden hinge DMD with improved optical efficiency and contrast ratio. The DMD is a micromechanical, reflective spatial light modulator monolithically fabricated over a conventional CMOS SRAM address circuit. A 768/spl times/576 pixel array DMD (442,368 mirrors) has been developed for and demonstrated in one-DMD and three-DMD PTV systems having diagonals ranging in size from 42 inches to 13 feet.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124851676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 154
High-density active matrix electroluminescent display using single-crystal silicon-on-insulator high-voltage IC technology 采用绝缘体上单晶硅高压集成电路技术的高密度有源矩阵电致发光显示器
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347247
G. Dolny, A. Ipri, F. Hsueh, R. Stewart, R. Khormaei, S. Thayer, T. Keyser, G. Becker, M. Spitzer, M. Batty
{"title":"High-density active matrix electroluminescent display using single-crystal silicon-on-insulator high-voltage IC technology","authors":"G. Dolny, A. Ipri, F. Hsueh, R. Stewart, R. Khormaei, S. Thayer, T. Keyser, G. Becker, M. Spitzer, M. Batty","doi":"10.1109/IEDM.1993.347247","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347247","url":null,"abstract":"A novel, high-density, active-matrix, electroluminescent display has been fabricated using single-crystal silicon-on-insulator technology. This new approach offers many advantages including high brightness, superior speed, low power dissipation, high pixel density, high resolution, good gray-scale performance, and improved reliability.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124949772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers 低噪声和高增益的94 GHz单片inp型HEMT放大器
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347361
H. Wang, T. Ton, R. Lai, D. Lo, S. Chen, D. Streit, G. Dow, K. Tan, J. Berenz
{"title":"Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers","authors":"H. Wang, T. Ton, R. Lai, D. Lo, S. Chen, D. Streit, G. Dow, K. Tan, J. Berenz","doi":"10.1109/IEDM.1993.347361","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347361","url":null,"abstract":"This paper reports the development of low noise and high gain W-band monolithic amplifiers based on 0.1 /spl mu/m pseudomorphic InAlAs/InGaAs/InP HEMT technology. A one-stage amplifier designed for low noise demonstrates a measured noise figure of 2.6 dB and an associated small signal gain of 7 dB at 96 GHz with a low dc power consumption of 6 mW. Another four-stage amplifier designed for high gain has a small signal gain of 27/spl plusmn/2 dB from 80-100 GHz, with a noise figure of about 5 dB and a dc power consumption of 43 mW. To our knowledge, these are the best reported noise figure and gain performance of monolithic amplifiers operating at these frequencies and represent state-of-the-art results.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125368304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
An improved structure of a-SiC:H thin film p-i-n junction LED a-SiC:H薄膜p-i-n结LED结构的改进
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347365
C. Zhiming, Pu Hongbing, Yu Mingbing, Lei Tianmin
{"title":"An improved structure of a-SiC:H thin film p-i-n junction LED","authors":"C. Zhiming, Pu Hongbing, Yu Mingbing, Lei Tianmin","doi":"10.1109/IEDM.1993.347365","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347365","url":null,"abstract":"The brightness and the threshold voltage of a-SiC:H thin film p-i-n junction LEDs have been remarkably improved by an extra n-type uc-Si:H thin layer inserted between the back electrode and the n-type a-SiC:H injection layer. It has also been demonstrated that the characteristics of a-SiC:H LEDs can be reformed by replacing methane with ethylene in the reaction gas mixture for a-SiC:H deposition.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126784810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A multiple output CMD imager for real-time image processing 用于实时图像处理的多输出CMD成像器
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347236
I. Takayanagi, T. Isokawa, F. Nakamura, J. Nakamura
{"title":"A multiple output CMD imager for real-time image processing","authors":"I. Takayanagi, T. Isokawa, F. Nakamura, J. Nakamura","doi":"10.1109/IEDM.1993.347236","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347236","url":null,"abstract":"The purpose of this paper is to examine a newly devised Charge Modulation Device (CMD) image sensor designed for real-time image processing. We designed, fabricated and evaluated a 258/spl times/258 pixels CMD imager with nine parallel outputs. 3/spl times/3 neighboring signals are obtained simultaneously at the nine output ports and the frame image is obtained by scanning the pixels. A camera system using the imager successfully performed the Sobel or the Laplacian operation in real-time (60 frames/s) with low power dissipation. The image processing concept utilizes CMD's unique features, such as nondestructive readout capability, linear current output and flexibility in implementing various readout schemes. This architecture will produce compact and light weight smart imaging systems.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122550392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fabrication of quantum dots using in-situ etching and regrowth during MBE growth 利用原位蚀刻和MBE生长过程中的再生制备量子点
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347318
Der-Cherng Liu, Chien-Ping Lee, S. Shy
{"title":"Fabrication of quantum dots using in-situ etching and regrowth during MBE growth","authors":"Der-Cherng Liu, Chien-Ping Lee, S. Shy","doi":"10.1109/IEDM.1993.347318","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347318","url":null,"abstract":"A novel fabrication technique for semiconductor quantum dots is demonstrated. Using in-situ thermal etching during molecular beam epitaxial growth (MBE) with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run. Photoluminescence spectra clearly indicated the blue shift as a result of the quantum confinement effect.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128346681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A novel global planarization technology using defocused resist patterning with blanket stripe mask (DRESS) 一种基于毛毯条纹掩模的离焦抗蚀图纹全局平面化新技术
Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI: 10.1109/IEDM.1993.347224
Y. Matsubara, T. Akimoto, H. Iwasaki, S. Ito, T. Ishigami, K. Noguchi, E. Ikawa, K. Okumura
{"title":"A novel global planarization technology using defocused resist patterning with blanket stripe mask (DRESS)","authors":"Y. Matsubara, T. Akimoto, H. Iwasaki, S. Ito, T. Ishigami, K. Noguchi, E. Ikawa, K. Okumura","doi":"10.1109/IEDM.1993.347224","DOIUrl":"https://doi.org/10.1109/IEDM.1993.347224","url":null,"abstract":"A novel global planarization technology which uses a Defocused Resist patterning with blanket Stripe mask (DRESS) has been developed. DRESS technique consists of the selective formation of the stripe resist pattern on the lower area of the topography, using a blanket stripe mask with a focus on the lower area in order to defocus the resist pattern at the higher area. Using this technique, two global planarization processes were proposed and a remarkable global planarized topology has been achieved for 4-level interconnection with step height as large as 3 /spl mu/m.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128598144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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