a-SiC:H薄膜p-i-n结LED结构的改进

Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI:10.1109/IEDM.1993.347365

C. Zhiming, Pu Hongbing, Yu Mingbing, Lei Tianmin

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引用次数: 1

摘要

在背电极和n型a-SiC:H注入层之间额外插入n型uc-Si:H薄层，显著提高了a-SiC:H薄膜p-i-n结led的亮度和阈值电压。研究还表明，在a-SiC:H沉积的反应气体混合物中，用乙烯代替甲烷可以改变a-SiC:H发光二极管的特性。

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An improved structure of a-SiC:H thin film p-i-n junction LED

The brightness and the threshold voltage of a-SiC:H thin film p-i-n junction LEDs have been remarkably improved by an extra n-type uc-Si:H thin layer inserted between the back electrode and the n-type a-SiC:H injection layer. It has also been demonstrated that the characteristics of a-SiC:H LEDs can be reformed by replacing methane with ethylene in the reaction gas mixture for a-SiC:H deposition.<>

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Proceedings of IEEE International Electron Devices Meeting

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