An improved structure of a-SiC:H thin film p-i-n junction LED

Abstract

The brightness and the threshold voltage of a-SiC:H thin film p-i-n junction LEDs have been remarkably improved by an extra n-type uc-Si:H thin layer inserted between the back electrode and the n-type a-SiC:H injection layer. It has also been demonstrated that the characteristics of a-SiC:H LEDs can be reformed by replacing methane with ethylene in the reaction gas mixture for a-SiC:H deposition.<>