利用原位蚀刻和MBE生长过程中的再生制备量子点

Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI:10.1109/IEDM.1993.347318

Der-Cherng Liu, Chien-Ping Lee, S. Shy

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引用次数: 2

摘要

介绍了一种新的半导体量子点制备技术。采用内置蒸发掩膜的分子束外延生长(MBE)过程中的原位热蚀刻技术，在单次生长中获得了半导体量子点。光致发光光谱清楚地显示了由于量子约束效应而产生的蓝移。

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Fabrication of quantum dots using in-situ etching and regrowth during MBE growth

A novel fabrication technique for semiconductor quantum dots is demonstrated. Using in-situ thermal etching during molecular beam epitaxial growth (MBE) with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run. Photoluminescence spectra clearly indicated the blue shift as a result of the quantum confinement effect.<>

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Proceedings of IEEE International Electron Devices Meeting

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