Fabrication of quantum dots using in-situ etching and regrowth during MBE growth

Abstract

A novel fabrication technique for semiconductor quantum dots is demonstrated. Using in-situ thermal etching during molecular beam epitaxial growth (MBE) with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run. Photoluminescence spectra clearly indicated the blue shift as a result of the quantum confinement effect.<>