采用绝缘体上单晶硅高压集成电路技术的高密度有源矩阵电致发光显示器

Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI:10.1109/IEDM.1993.347247

G. Dolny, A. Ipri, F. Hsueh, R. Stewart, R. Khormaei, S. Thayer, T. Keyser, G. Becker, M. Spitzer, M. Batty

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引用次数: 2

摘要

一种新型的高密度有源矩阵电致发光显示器利用绝缘体上单晶硅技术制成。这种新方法具有许多优点，包括高亮度、优越的速度、低功耗、高像素密度、高分辨率、良好的灰度性能和更高的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-density active matrix electroluminescent display using single-crystal silicon-on-insulator high-voltage IC technology

A novel, high-density, active-matrix, electroluminescent display has been fabricated using single-crystal silicon-on-insulator technology. This new approach offers many advantages including high brightness, superior speed, low power dissipation, high pixel density, high resolution, good gray-scale performance, and improved reliability.<>

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Proceedings of IEEE International Electron Devices Meeting

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