低噪声和高增益的94 GHz单片inp型HEMT放大器

Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI:10.1109/IEDM.1993.347361

H. Wang, T. Ton, R. Lai, D. Lo, S. Chen, D. Streit, G. Dow, K. Tan, J. Berenz

{"title":"低噪声和高增益的94 GHz单片inp型HEMT放大器","authors":"H. Wang, T. Ton, R. Lai, D. Lo, S. Chen, D. Streit, G. Dow, K. Tan, J. Berenz","doi":"10.1109/IEDM.1993.347361","DOIUrl":null,"url":null,"abstract":"This paper reports the development of low noise and high gain W-band monolithic amplifiers based on 0.1 /spl mu/m pseudomorphic InAlAs/InGaAs/InP HEMT technology. A one-stage amplifier designed for low noise demonstrates a measured noise figure of 2.6 dB and an associated small signal gain of 7 dB at 96 GHz with a low dc power consumption of 6 mW. Another four-stage amplifier designed for high gain has a small signal gain of 27/spl plusmn/2 dB from 80-100 GHz, with a noise figure of about 5 dB and a dc power consumption of 43 mW. To our knowledge, these are the best reported noise figure and gain performance of monolithic amplifiers operating at these frequencies and represent state-of-the-art results.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers\",\"authors\":\"H. Wang, T. Ton, R. Lai, D. Lo, S. Chen, D. Streit, G. Dow, K. Tan, J. Berenz\",\"doi\":\"10.1109/IEDM.1993.347361\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the development of low noise and high gain W-band monolithic amplifiers based on 0.1 /spl mu/m pseudomorphic InAlAs/InGaAs/InP HEMT technology. A one-stage amplifier designed for low noise demonstrates a measured noise figure of 2.6 dB and an associated small signal gain of 7 dB at 96 GHz with a low dc power consumption of 6 mW. Another four-stage amplifier designed for high gain has a small signal gain of 27/spl plusmn/2 dB from 80-100 GHz, with a noise figure of about 5 dB and a dc power consumption of 43 mW. To our knowledge, these are the best reported noise figure and gain performance of monolithic amplifiers operating at these frequencies and represent state-of-the-art results.<<ETX>>\",\"PeriodicalId\":346650,\"journal\":{\"name\":\"Proceedings of IEEE International Electron Devices Meeting\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1993.347361\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1993.347361","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

本文报道了基于0.1 /spl μ m伪晶InAlAs/InGaAs/InP HEMT技术的低噪声高增益w波段单片放大器的研制。一款专为低噪声设计的单级放大器显示，在96 GHz下，测量噪声系数为2.6 dB，相关小信号增益为7 dB，直流功耗低至6 mW。另一种设计用于高增益的四级放大器，在80-100 GHz范围内信号增益较小，为27/spl plusmn/2 dB，噪声系数约为5 dB，直流功耗为43 mW。据我们所知，这些是在这些频率下工作的单片放大器的最佳噪声系数和增益性能，代表了最先进的结果

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers

This paper reports the development of low noise and high gain W-band monolithic amplifiers based on 0.1 /spl mu/m pseudomorphic InAlAs/InGaAs/InP HEMT technology. A one-stage amplifier designed for low noise demonstrates a measured noise figure of 2.6 dB and an associated small signal gain of 7 dB at 96 GHz with a low dc power consumption of 6 mW. Another four-stage amplifier designed for high gain has a small signal gain of 27/spl plusmn/2 dB from 80-100 GHz, with a noise figure of about 5 dB and a dc power consumption of 43 mW. To our knowledge, these are the best reported noise figure and gain performance of monolithic amplifiers operating at these frequencies and represent state-of-the-art results.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of IEEE International Electron Devices Meeting

自引率

0.00%

发文量