I. Fujieda, F. Okumura, K. Sera, H. Asada, H. Sekine
{"title":"自参考多晶硅TFT放大器读出线性图像传感器","authors":"I. Fujieda, F. Okumura, K. Sera, H. Asada, H. Sekine","doi":"10.1109/IEDM.1993.347234","DOIUrl":null,"url":null,"abstract":"A readout scheme with thin film transistor (TFT) amplifier is proposed for a linear image sensor. Each pixel is provided with a TFT amplifier and additional TFT circuits which allow self-calibration of the amplifier. Prototype sensors were successfully fabricated by the low-temperature poly-Si process utilizing excimer laser annealing.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Self-referenced poly-Si TFT amplifier readout for a linear image sensor\",\"authors\":\"I. Fujieda, F. Okumura, K. Sera, H. Asada, H. Sekine\",\"doi\":\"10.1109/IEDM.1993.347234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A readout scheme with thin film transistor (TFT) amplifier is proposed for a linear image sensor. Each pixel is provided with a TFT amplifier and additional TFT circuits which allow self-calibration of the amplifier. Prototype sensors were successfully fabricated by the low-temperature poly-Si process utilizing excimer laser annealing.<<ETX>>\",\"PeriodicalId\":346650,\"journal\":{\"name\":\"Proceedings of IEEE International Electron Devices Meeting\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1993.347234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1993.347234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Self-referenced poly-Si TFT amplifier readout for a linear image sensor
A readout scheme with thin film transistor (TFT) amplifier is proposed for a linear image sensor. Each pixel is provided with a TFT amplifier and additional TFT circuits which allow self-calibration of the amplifier. Prototype sensors were successfully fabricated by the low-temperature poly-Si process utilizing excimer laser annealing.<>