A. Reygenson, O.A. Menin, P.R. Smith, R. Hamm, R. Montgomery, R.D. Yadvish, D. Ritter, M. Haner
{"title":"InP/GaInAs异质结构双极晶体管的弹道输运效应","authors":"A. Reygenson, O.A. Menin, P.R. Smith, R. Hamm, R. Montgomery, R.D. Yadvish, D. Ritter, M. Haner","doi":"10.1109/IEDM.1993.347278","DOIUrl":null,"url":null,"abstract":"The electron transport mechanism in the base (p=5/spl times/10/sup 19/cm/sup -3/) of GaInAs/InP heterojunction bipolar transistor was studied by the Monte Carlo method using the dielectric function response method. The self-consistent treatment included elastic and inelastic electron scattering. The room temperature transport was identified as ballistic for the base width less than 500 /spl Aring/. For the base width in the range of 500-2000 /spl Aring/ there are both ballistic and quasiballistic (hot electron diffusion) transport mechanisms. For the base width greater than 2000 /spl Aring/ we observe transport of thermalized electrons with long transit times. These results correlate well with the experimentally measured base delay times.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors\",\"authors\":\"A. Reygenson, O.A. Menin, P.R. Smith, R. Hamm, R. Montgomery, R.D. Yadvish, D. Ritter, M. Haner\",\"doi\":\"10.1109/IEDM.1993.347278\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electron transport mechanism in the base (p=5/spl times/10/sup 19/cm/sup -3/) of GaInAs/InP heterojunction bipolar transistor was studied by the Monte Carlo method using the dielectric function response method. The self-consistent treatment included elastic and inelastic electron scattering. The room temperature transport was identified as ballistic for the base width less than 500 /spl Aring/. For the base width in the range of 500-2000 /spl Aring/ there are both ballistic and quasiballistic (hot electron diffusion) transport mechanisms. For the base width greater than 2000 /spl Aring/ we observe transport of thermalized electrons with long transit times. These results correlate well with the experimentally measured base delay times.<<ETX>>\",\"PeriodicalId\":346650,\"journal\":{\"name\":\"Proceedings of IEEE International Electron Devices Meeting\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1993.347278\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1993.347278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors
The electron transport mechanism in the base (p=5/spl times/10/sup 19/cm/sup -3/) of GaInAs/InP heterojunction bipolar transistor was studied by the Monte Carlo method using the dielectric function response method. The self-consistent treatment included elastic and inelastic electron scattering. The room temperature transport was identified as ballistic for the base width less than 500 /spl Aring/. For the base width in the range of 500-2000 /spl Aring/ there are both ballistic and quasiballistic (hot electron diffusion) transport mechanisms. For the base width greater than 2000 /spl Aring/ we observe transport of thermalized electrons with long transit times. These results correlate well with the experimentally measured base delay times.<>
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