{"title":"在低电流密度下实现高f/sub - t/的新型HBT结构","authors":"C.E. Chang, P. Asbeck, L. Tran, D. Streit, A. Oki","doi":"10.1109/IEDM.1993.347279","DOIUrl":null,"url":null,"abstract":"Through modifications of the epitaxial structure of a GaAs/AlGaAs HBT, the junction capacitance (C/sub be/) and recombination rate in the base-emitter junction region have been substantially reduced. The modified structure leads to both higher f/sub t/ and higher /spl beta/ at low current densities (10/sup 2spl les/J/sub cspl les/10/sup 4/ A/cm/sup 2/). The modifications include a lightly doped emitter (LDE) and a strategically placed /spl delta/-doping layer. Device simulations were used to optimize the LDE length and location of the /spl delta/-doping. The experimental results of a fabricated device with a 1370 /spl Aring/ LDE+/spl delta/-doping yielded a 3.3x reduction in C/sub be/, a 2.7x increase in f/sub t/, and a 2x increase in /spl beta/ over the baseline device at low J/sub c/ (J/sub cspl les/10/sup 3/ A/cm/sup 2/).<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Novel HBT structure for high f/sub t/ at low current density\",\"authors\":\"C.E. Chang, P. Asbeck, L. Tran, D. Streit, A. Oki\",\"doi\":\"10.1109/IEDM.1993.347279\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Through modifications of the epitaxial structure of a GaAs/AlGaAs HBT, the junction capacitance (C/sub be/) and recombination rate in the base-emitter junction region have been substantially reduced. The modified structure leads to both higher f/sub t/ and higher /spl beta/ at low current densities (10/sup 2spl les/J/sub cspl les/10/sup 4/ A/cm/sup 2/). The modifications include a lightly doped emitter (LDE) and a strategically placed /spl delta/-doping layer. Device simulations were used to optimize the LDE length and location of the /spl delta/-doping. The experimental results of a fabricated device with a 1370 /spl Aring/ LDE+/spl delta/-doping yielded a 3.3x reduction in C/sub be/, a 2.7x increase in f/sub t/, and a 2x increase in /spl beta/ over the baseline device at low J/sub c/ (J/sub cspl les/10/sup 3/ A/cm/sup 2/).<<ETX>>\",\"PeriodicalId\":346650,\"journal\":{\"name\":\"Proceedings of IEEE International Electron Devices Meeting\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1993.347279\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1993.347279","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel HBT structure for high f/sub t/ at low current density
Through modifications of the epitaxial structure of a GaAs/AlGaAs HBT, the junction capacitance (C/sub be/) and recombination rate in the base-emitter junction region have been substantially reduced. The modified structure leads to both higher f/sub t/ and higher /spl beta/ at low current densities (10/sup 2spl les/J/sub cspl les/10/sup 4/ A/cm/sup 2/). The modifications include a lightly doped emitter (LDE) and a strategically placed /spl delta/-doping layer. Device simulations were used to optimize the LDE length and location of the /spl delta/-doping. The experimental results of a fabricated device with a 1370 /spl Aring/ LDE+/spl delta/-doping yielded a 3.3x reduction in C/sub be/, a 2.7x increase in f/sub t/, and a 2x increase in /spl beta/ over the baseline device at low J/sub c/ (J/sub cspl les/10/sup 3/ A/cm/sup 2/).<>
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