采用0.1 /spl mu/m伪晶AlGaAs/InGaAs/GaAs HEMT技术的单片23.5至94 GHz频率四倍器

Proceedings of IEEE International Electron Devices Meeting Pub Date : 1993-12-05 DOI:10.1109/IEDM.1993.347357

H. Wang, K. Chang, D. Lo, K. Tan, D. Streit, G. Dow, B. Allen

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引用次数: 1

摘要

基于0.1 /spl mu/m伪晶AlGaAs/InGaAs/GaAs高电子迁移率晶体管技术，研制了单片23.5 ~ 94 GHz频率四倍器。该频率四倍器由23.5至47ghz倍倍器、47至94ghz倍倍器和两个倍倍器之间的47ghz缓冲放大器组成。在94至98 GHz的输出频率范围内，测量到的转换损耗为5-7 dB。据我们所知，这是第一个使用HEMT技术的w波段(75-110 GHz)单片频率四倍器。它可以与23.5 GHz的vco集成，在94 GHz左右构建低相位噪声和稳定的频率源

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A monolithic 23.5 to 94 GHz frequency quadrupler using 0.1 /spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs HEMT technology

A monolithic 23.5 to 94 GHz frequency quadrupler based on 0.1 /spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor technology has been developed. This frequency quadrupler consists of a 23.5 to 47 GHz doubler, a 47 to 94 GHz doubler, and a 47 GHz buffer amplifier between the two doublers. It exhibits a measured conversion loss of 5-7 dB at the output frequency from 94 to 98 GHz. To our knowledge, this is the first reported W-band (75-110 GHz) monolithic frequency quadrupler using HEMT technology. It can be integrated with 23.5 GHz VCOs to construct low phase noise and stable frequency sources around 94 GHz.<>

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Proceedings of IEEE International Electron Devices Meeting

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