N. Yoshioka, J. Miyazaki, H. Kusunose, K. Hosono, M. Nakajima, H. Morimoto, Y. Watakabe, K. Tsukamoto
{"title":"用MoSiO和MoSiON单层吸收移相器制作的实用衰减移相掩模","authors":"N. Yoshioka, J. Miyazaki, H. Kusunose, K. Hosono, M. Nakajima, H. Morimoto, Y. Watakabe, K. Tsukamoto","doi":"10.1109/IEDM.1993.347227","DOIUrl":null,"url":null,"abstract":"Attenuated phase-shifting mask with a single-layer absorptive shifter with MoSiO or MoSiON films has been developed. These films satisfies the condition both the 180-degree phase shift and the transmittance between 5 and 20%. Conventional mask processes, such as etching, cleaning, defect inspection and defect repair, can be used for the fabrication. Defect-free masks for hole layers of 64 M-bit DRAM have been obtained. Using this mask, the focus depth of 0.35-/spl mu/m hole is improved from 0.6 /spl mu/m to 1.5 /spl mu/m.<<ETX>>","PeriodicalId":346650,"journal":{"name":"Proceedings of IEEE International Electron Devices Meeting","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Practical attenuated phase-shifting mask with a single-layer absorptive shifter of MoSiO and MoSiON for ULSI fabrication\",\"authors\":\"N. Yoshioka, J. Miyazaki, H. Kusunose, K. Hosono, M. Nakajima, H. Morimoto, Y. Watakabe, K. Tsukamoto\",\"doi\":\"10.1109/IEDM.1993.347227\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Attenuated phase-shifting mask with a single-layer absorptive shifter with MoSiO or MoSiON films has been developed. These films satisfies the condition both the 180-degree phase shift and the transmittance between 5 and 20%. Conventional mask processes, such as etching, cleaning, defect inspection and defect repair, can be used for the fabrication. Defect-free masks for hole layers of 64 M-bit DRAM have been obtained. Using this mask, the focus depth of 0.35-/spl mu/m hole is improved from 0.6 /spl mu/m to 1.5 /spl mu/m.<<ETX>>\",\"PeriodicalId\":346650,\"journal\":{\"name\":\"Proceedings of IEEE International Electron Devices Meeting\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1993.347227\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1993.347227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Practical attenuated phase-shifting mask with a single-layer absorptive shifter of MoSiO and MoSiON for ULSI fabrication
Attenuated phase-shifting mask with a single-layer absorptive shifter with MoSiO or MoSiON films has been developed. These films satisfies the condition both the 180-degree phase shift and the transmittance between 5 and 20%. Conventional mask processes, such as etching, cleaning, defect inspection and defect repair, can be used for the fabrication. Defect-free masks for hole layers of 64 M-bit DRAM have been obtained. Using this mask, the focus depth of 0.35-/spl mu/m hole is improved from 0.6 /spl mu/m to 1.5 /spl mu/m.<>
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