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21st International Reliability Physics Symposium最新文献

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Reliability of GaAs MESFET Logic Circuits GaAs MESFET逻辑电路的可靠性
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.362003
M. Namordi, W. White
{"title":"Reliability of GaAs MESFET Logic Circuits","authors":"M. Namordi, W. White","doi":"10.1109/IRPS.1983.362003","DOIUrl":"https://doi.org/10.1109/IRPS.1983.362003","url":null,"abstract":"Twelve depletion mode GaAs MESFET logic circuits were subjected to a step-stress life test. Each circuit consisted of an 11-stage ring oscillator with one buffer stage. Both BFL and SDFL circuits with Vp ¿ ¿2.0 V and ¿1.0 V were represented. The circuits were operated for 500 hours at each of eight temperature stress steps ranging between 25° and 200°C with 25°C increments. No chip failures occurred upon completion of the life test. Reasonable interpretation of these results suggests that GaAs MESFET logic circuits should be very reliable.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121707221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS Latch-Up Characterization using a Laser Scanner 用激光扫描仪表征CMOS锁存器
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361972
F. Henley, M. Chi, W. Oldham
{"title":"CMOS Latch-Up Characterization using a Laser Scanner","authors":"F. Henley, M. Chi, W. Oldham","doi":"10.1109/IRPS.1983.361972","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361972","url":null,"abstract":"The technique of using a focused laser beam to induce latch-up in a CMOS circuit is introduced and described. The characterization method allows the quantitative assessment of a structure's latch-up margin and its dependence on operating parameters (supply voltage, temperature, etc). Various scans were performed on CMOS test structures with adjustable latch-up margins. CMOS latch-up parameters, such as the spreading resistance and the parasitic transistor betas, were found important in determining the sensitivity peaks (position of highest latch-up sensitivity to carrier generation). The shape and height of these peaks were found to be consistent with the commonly used two-transistor circuit.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131992871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
A Physical Model for Degradation of DRAMs During Accelerated Stress Aging 加速应力老化过程中dram退化的物理模型
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361966
A. Sabnis, J. T. Nelson
{"title":"A Physical Model for Degradation of DRAMs During Accelerated Stress Aging","authors":"A. Sabnis, J. T. Nelson","doi":"10.1109/IRPS.1983.361966","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361966","url":null,"abstract":"Charge trapping and interface-state generation at the Si/SiO2 interface have been characterized from the results of pulse-aging and radiation damage experiments conducted on the n-channel Si-Gate MOSFETs. The detailed analysis indicates that it is the intrinsic property of the Si/SiO2 interface to trap holes which act as Qr-like charges. The holes once they are trapped do not redistribute along the interface, but in presence of hydrogen they move toward Si and convert to fast-interface states (Dit). The degradations of the hold-time and the minimum voltage required to operate of a DRAM are related to the densities of Qf and Di, respectively. The ultimate degradation depends on the resultant of the rate of build-up and the rate of annealing of Qf and Dit.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122442051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Electromigration Failure in Thin Film Silicides and Polysilicon/Silicide (Polycide) Structures 薄膜硅化物和多晶硅/硅化物(多晶硅)结构中的电迁移失效
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361984
J. Lloyd, M. Sullivan, G. Hopper, J. Coffin, E. Severn, J. Jozwiak
{"title":"Electromigration Failure in Thin Film Silicides and Polysilicon/Silicide (Polycide) Structures","authors":"J. Lloyd, M. Sullivan, G. Hopper, J. Coffin, E. Severn, J. Jozwiak","doi":"10.1109/IRPS.1983.361984","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361984","url":null,"abstract":"Thin film conductor stripes (150 nm thick), of silicides of tantalum and tungsten deposited on to thermal oxide as well as silicides deposited on to 150 nm of n-type polycrystalline silicon were stressed at high DC current densities (<106 A/cm2) untill open-circuit failure. All of the stripes failed by electromigration. The sign of the charge carrier in silicides of Ta and W, determined by failure location, was opposite to the published data determined from the Hall effect.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128612742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Radiation Effects in GaAs Devices and ICs 砷化镓器件和集成电路中的辐射效应
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.362004
W. Anderson, S. Binari
{"title":"Radiation Effects in GaAs Devices and ICs","authors":"W. Anderson, S. Binari","doi":"10.1109/IRPS.1983.362004","DOIUrl":"https://doi.org/10.1109/IRPS.1983.362004","url":null,"abstract":"This paper is a review of radiation effects in GaAs devices and IC's. It is an important area in satellite electronics because GaAs has some advantages over Si in terms of radiation hardness. The paper discusses what measurements have been made in the past on the different GaAs devices of interest, the effects of transient radiation and total dose in terms of threshold levels (where the radiation effect is first detectable) and upset levels (where the effect is so large that normal operation is prevented, e.g., in a memory cell, loss of a 1 or 0. The emphasis is on recent results in transient radiation effects.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127710654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Hot Electron Reliability Modeling in VLSI Devices VLSI器件中的热电子可靠性建模
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361967
A. Ito, H. A. Swasey, E. W. George
{"title":"Hot Electron Reliability Modeling in VLSI Devices","authors":"A. Ito, H. A. Swasey, E. W. George","doi":"10.1109/IRPS.1983.361967","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361967","url":null,"abstract":"The dependence of hot-electron trapping on device size and applied gate bias is analyzed both theoretically and experimentally. A simple and accurate model is developed to determine the long term stress effect on narrow and short channel devices. It is found that the channel hot electron limit is determined by the emission probability and trap density in the birdsbeak region of narrow devices when the gate bias exceeds the threshold voltage of the parasitic birdsbeak device. The channel lengths, dra-in to source bias and gate oxide trap density for the LOCOS process are essential parameters incorporated in this model. The calculated curves depicting threshold voltage shift versus time are in excellent agreement with empirical data. These shifts are accounted for by the effect of the higher trap density in the birdsbeak region for high bias conditions on narrow devices.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"93 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132536485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A New Failure Mechanism Related to the Formation of Dark Defects in GaAlAs Visible Lasers GaAlAs可见激光器中暗缺陷形成的新失效机制
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361978
S. Todoroki, T. Takahashi, K. Aiki, H. Uchida
{"title":"A New Failure Mechanism Related to the Formation of Dark Defects in GaAlAs Visible Lasers","authors":"S. Todoroki, T. Takahashi, K. Aiki, H. Uchida","doi":"10.1109/IRPS.1983.361978","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361978","url":null,"abstract":"Dark defects related to degradation in GaAlAs visible lasers were investigated by using an electron beam induced current mode of a SEM. Two new modes of defects, dark regions and <100> dark lines, were observed bordering the edge of the stripe regions. These defects are related to a device structure and the crystallization of epitaxial wafers.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129604271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Effects of Entrapped Bubbles in Solder Used for the Attachment of Leadless Ceramic Chip Carriers 无铅陶瓷片载体焊料中包埋气泡的影响
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361989
A. Dermarderosian, V. Gionet
{"title":"The Effects of Entrapped Bubbles in Solder Used for the Attachment of Leadless Ceramic Chip Carriers","authors":"A. Dermarderosian, V. Gionet","doi":"10.1109/IRPS.1983.361989","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361989","url":null,"abstract":"This study involves work associated with the effects of trapped gas pockets in solder joints formed by solder pastes used to attach leadless ceramic chip carriers (LCCC) to various substrates. The results indicate that the fatigue life of these joints is dramatically affected by the absence or presence of these bubbles. A somewhat informal survey of other investigators involved in the attachment of LCCC devices suggests that the solder voiding problem is widespread and may well be a leading factor in joint reliability. A motion picture analysis of the phenomenon of gasification will be shown to illustrate this problem.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130197151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Application of 1018.2 to Hybrid and VLSI Devices 1018.2在混合和VLSI器件中的应用
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361996
G. Ebel
{"title":"Application of 1018.2 to Hybrid and VLSI Devices","authors":"G. Ebel","doi":"10.1109/IRPS.1983.361996","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361996","url":null,"abstract":"This paper discusses several methods used to determine the amount of moisture within a hybrid or LSI package. Case histories are used to show that moisture measurements alone are not sufficient to analyze most problems. RGA (Residual Gas Analysis) provides data that is invaluable in determining the source of moisture within the package. Several possible sources of moisture will be presented. The results from extensive RGA analyses of hybrids show the validity of this type of testing. Finally recommendations for changes to test method 1018 of MIL-STD-883 as applied to hybrids and VLSI devices are presented. These include: 1) recommended times and temperatures for baking of the device prior to RGA analysis; 2) the time windows for testing after removal from the oven; and 3) acceptable levels of moisture for hybrids and VLSI devices.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"396 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132813540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation-Induced Soft Errors and Floating Gate Memories 辐射诱发软误差和浮门存储器
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361979
J. Caywood, B. Prickett
{"title":"Radiation-Induced Soft Errors and Floating Gate Memories","authors":"J. Caywood, B. Prickett","doi":"10.1109/IRPS.1983.361979","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361979","url":null,"abstract":"A new failure mechanism which may be induced in floating gate memories by ionizing radiation is discussed. This mechanism, which is designated a \"firm error\", is modeled in some detail. Calculations which show that the MTBF for alpha particles emitted by ceramic packaging materials is > 100,000 years are verified experimentally. The effect of device scaling on this mechanism is also discussed.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133531189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
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