21st International Reliability Physics Symposium最新文献_第3页

A Non Contact Voltage Measurement Technique using Auger Spectroscopy 一种利用俄歇光谱的非接触电压测量技术

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361976

J. Patterson, Michael C. Smith

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引用次数: 4

Report on the 1983 IRPS Burn-In Workshop 1983年IRPS老化工作坊报告

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361997

Patrick E. Kennedy

引用次数: 0

Phenomenological Observations on Electromigration 电迁移的现象学观察

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361954

R. W. Thomas, Donald W. Calabrese

{"title":"Phenomenological Observations on Electromigration","authors":"R. W. Thomas, Donald W. Calabrese","doi":"10.1109/IRPS.1983.361954","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361954","url":null,"abstract":"Direct dynamic observations were made of aluminum electromigration by an in situ scanning electron microscope technique. Time lapse 16 mm moving pictures were taken of electromigration which occurred in a commercially available MC 14050 hex buffer. The circuit was biased above rated specifications to obtain a current density of 7×105 Amps/cm2. The movie film clearly demonstrated a number of new phenomena not previously noted by after the fact examination. Some voids were very mobile and moved up the metallization stripe by a voiding-refill process. Another voiding process was observed in which the aluminum disappeared from the top of a mesa at a point where the current density was essentially zero. The formation of a hillock was observed in which the aluminum growth stretched the aluminum silicate glass which covers the stripes, first by forming a dome and then by rapid vertical and lateral growth. Voids were observed forming within several microns of a growing hillock literally emptying aluminum by a river-like mechanism into the hillock structure that was not constrained by grain boundaries or other defects. Changes in growth patterns (hillocks and voids) were noticed when the circuits were exposed to air ambients for short periods of time. It was observed that the presence of a surface oxide on the walls of a void greatly retard the void growth indicating that a primary mechanism for aluminum transport is along the oxide free wall structure. Additional evidence supporting this migration mechanism is given in the text by high resolution electron micrographs.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125335525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

VLSI Package Reliability Workshop Report VLSI封装可靠性研讨会报告

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.362005

Daniel D. Zimmermant, H. Schafft

引用次数: 0

Soft Pipes Cause Reliability Problem in Bipolar Integrated Circuits 软管道导致双极集成电路可靠性问题

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361983

J. Casey, J. Lee, D. Redman, Don Zinmner

引用次数: 0

GaAs Device Reliability Workshop Summary 砷化镓器件可靠性研讨会总结

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361999

A. Christou

引用次数: 1

Reliability of Ku-Band GaAs Power FETs Under Highly Stressed RF Operation 高应力射频工作下ku波段GaAs功率场效应管的可靠性

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.362001

P. White, C. G. Rogers, B. Hewitt

引用次数: 7

Trapping in Tunnel Oxides Grown on Textured Polysilicon 在纹理多晶硅上生长的隧道氧化物的俘获

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361970

B. Prickett, J. Caywood, R. Ellis

引用次数: 5

Latch-Up and Timing Failure Analysis of CMOS VLSI using Electron Beam Techniques 基于电子束技术的CMOS VLSI锁存和时序失效分析

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361973

S. Davidson

引用次数: 9

Model for Oxide Wearout Due to Charge Trapping 电荷俘获引起的氧化物损耗模型

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361990

W. K. Meyer, D. Crook

引用次数: 19