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Correlation of Analytical Facilities 分析设备的相关性
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361994
Benjamin A. Moore
{"title":"Correlation of Analytical Facilities","authors":"Benjamin A. Moore","doi":"10.1109/IRPS.1983.361994","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361994","url":null,"abstract":"New and emerging technologies such as VHSIC/VLSI and the expanded use of hybrids have presented a new series of problems in correlating analytical laboratory mass spectrometric moisture measurements. Standards and techniques, designed and tested for application in the more benign environment of smaller scale monolithic packaging, may not be directly applicable to new adsorption/desorption conditions and relatively large ( ¿lcc) sample gas volumes. The development of moisture standards is traced from the original Method 1018.2 (Internal Water Vapor Content) analytical laboratory certification program to the present. The results of several correlation experiments are presented, and the effect of time-temperature stress upon the stability of past and present standards is discussed. Design criteria for new standards is developed in order to solve both inherent sample problems and the challenge of tomorrow's technologies. Current efforts in this area are summarized. Semiconductor product moisture analysis data not only supports previously determined laboratory correlations but also positively establishes the success of Method 1018.2 in reducing the potential inclusion of moisture reliability hazards in military systems.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115076148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electromigration Characterization of DC Magnetron-Sputtered AL-SI Metallization 直流磁控溅射AL-SI金属化的电迁移特性
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361959
F. Fischer, F. Neppl, H. Oppolzer, U. Schwabe
{"title":"Electromigration Characterization of DC Magnetron-Sputtered AL-SI Metallization","authors":"F. Fischer, F. Neppl, H. Oppolzer, U. Schwabe","doi":"10.1109/IRPS.1983.361959","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361959","url":null,"abstract":"The residual gas dependence of the life time of dc magnetron-sputtered Al-Si (1.2%) interconnects under temperature/current stress was investigated. Whereas the interconnect life time decreased with increasing H2O partial pressure, it increased with O2 partial pressure up to 4×1O¿9 Torr. Narrow interconnects were more sensitive to the residual gas conditions during metal deposition than wide ones. The Al-Si films were further characterized with respect to microstructure, reflectivity and residual resistivity. Correlations between life time and Al-Si-properties available immediately after film deposition are discussed. The best correlation existed with the residual resistivity.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133127479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Lifetimes of 800nm-Wavelength GaAlAs Semiconductor Lasers 800nm波长GaAlAs半导体激光器的寿命
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361977
S. Kumada, H. Shimizu, K. Itoh
{"title":"Lifetimes of 800nm-Wavelength GaAlAs Semiconductor Lasers","authors":"S. Kumada, H. Shimizu, K. Itoh","doi":"10.1109/IRPS.1983.361977","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361977","url":null,"abstract":"This is the first report on the lifetimes of 800nm-wavelength GaAlAs semiconductor lasers which have recently been put into mass production. The experimetal analysis are described of influences of various factors on the lifetime such as diode temperature, thermal reistance, wavelength, facet coating, surge current and electrostatic discharge. The result of this study has shown that a extrapolated mean lifetime for 800nm/ 2.5mW GaAlAs lasers at room temperature is as long as 11.5 years.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124834509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
New EPROM Data-Loss Mechanisms 新的EPROM数据丢失机制
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361969
N. Mielke
{"title":"New EPROM Data-Loss Mechanisms","authors":"N. Mielke","doi":"10.1109/IRPS.1983.361969","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361969","url":null,"abstract":"Data-loss mechanisms in present-generation EPROMs have been studied. Defect-related data loss is primarily due to interpoly-oxide defects. This is a change from the previous generation and introduces a new EPROM failure mode--column data loss. Contamination-compensation is found to be due as much to field-driven motion as to diffusion, and one result is that contaminated regions can exhibit charge gain as well as charge loss. Intrinsic charge loss is attributed to detrapping of electrons from the oxide layers rather than to loss of stored charge, suggesting that with proper screening of defects EPROM data retention is effectively unlimited.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133219347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 44
Wire Bond Integrity Test Chip 线键完整性测试芯片
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361975
R. Blish, L. Parobek
{"title":"Wire Bond Integrity Test Chip","authors":"R. Blish, L. Parobek","doi":"10.1109/IRPS.1983.361975","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361975","url":null,"abstract":"A special test chip and bonding diagram has been designed to nondestructively evaluate wire bond integrity of plastic encapsulated IC packages. Differential Kelvin resistance measurements as a function of bake time provide a quantitative measure of bond degradation. It was found that a 20 m¿ resistance increase corresponds to unacceptable performance in bond pull and ball shear. A hypothesis is advanced to explain the development of bimodal distributions of bond resistance change and bond pull strengths, which develop after long bake periods. This method was used for optimization of gold wire bonding to pure aluminum and silicon-doped aluminum, and for encapsulant selection.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121859806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
GaAs FET High Power Pulse Reliability GaAs FET高功率脉冲可靠性
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361987
W. Anderson, A. Christou, B. Wilkins, L. Mang, Y. Anand
{"title":"GaAs FET High Power Pulse Reliability","authors":"W. Anderson, A. Christou, B. Wilkins, L. Mang, Y. Anand","doi":"10.1109/IRPS.1983.361987","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361987","url":null,"abstract":"Three types of commercially available GaAs FETs were studied under high power gate pulses to simulate the radar environment of transceivers which share the same antenna. Both single pulses and pulse trains of 10 ns and 1 ¿s pulse widths were used to gain an understanding of the physics of failure in these devices. Gradual degradation of the DC and RE characteristics was observed allowing study of the failure mechanisms before massive damage could occur to the channel region. Failures occurred primarily by electromigration from sharp points and other irregularities along the gate. Electromigration can be reduced by using gate and ohmic contact metallizations without sharp protrusions. These sharp protrusions and the resulting high fields lead to increased electromigration, particularly when the gate-source distance is very small.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123871255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Aluminum Electromigration Lifetime Variations with Linewidth: The Effects of Changing Stress Conditions 铝电迁移寿命随线宽的变化:应力条件变化的影响
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361957
J. Arzigian
{"title":"Aluminum Electromigration Lifetime Variations with Linewidth: The Effects of Changing Stress Conditions","authors":"J. Arzigian","doi":"10.1109/IRPS.1983.361957","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361957","url":null,"abstract":"The electromigration behavior of aluminum in films deposited by In-Source evaporation has been examined for films with widths ranging from 2 to 5 ¿m and lengths ranging from 30-80 cm. The linewidth dependence of the lifetime was obtained for films subjected to steady direct current stressing as well as for films subjected to pulsed current stressing. The results indicate that the observed linewidth dependence is a function of the nature of the accelerated aging method employed. Those samples subjected to high frequency, (2MHz), low duty cycle pulses showed less linewidth dependence for lifetime than did those subjected to high duty cycle and steady direct current stressing. Measurements utilizing pulse nonlinearity testing show a correlation between the onset of degradation as evidenced by a change in the thermal time constant, and the nature of the applied current stress tests is proposed which may more accurately predict metallization lifetime under actual use conditions.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122385979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Characterization and Screening of SiO2 Defects in EEPROM Structures EEPROM结构中SiO2缺陷的表征与筛选
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361991
R. E. Shiner, N. Mielke, R. Haq
{"title":"Characterization and Screening of SiO2 Defects in EEPROM Structures","authors":"R. E. Shiner, N. Mielke, R. Haq","doi":"10.1109/IRPS.1983.361991","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361991","url":null,"abstract":"","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124002036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Reliability of Aluminum-Gate Metallization in GaAs Power FETs GaAs功率场效应管铝栅金属化的可靠性
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.361986
W. Slusark, G. Schnable, V. R. Monshaw, M. Fukuta
{"title":"Reliability of Aluminum-Gate Metallization in GaAs Power FETs","authors":"W. Slusark, G. Schnable, V. R. Monshaw, M. Fukuta","doi":"10.1109/IRPS.1983.361986","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361986","url":null,"abstract":"We report a failure mechanism in aluminum-gate GaAs power FETs (Fujitsu FLC-30 MA) caused by a deficient step metallization. Transistors analyzed during the course of a solid-state power amplifier manufacturing program revealed gate electromigration as a probable cause of discrepant performance. A deficiency in metallization step coverage at the gate-source crossover of these transistors, in conjunction with microcracks which were observed at the cross-over, resulted in a redirection of gate current. This increased current flow in the gate finger stripe led to early gate electromigration failures. Transistors which underwent a 200-hour, 175°C burn-in as part of the screening process were seen to exhibit this effect. A screening method based on measuring the resistance of the aluminum metallization which crosses the source stripe has been developed to quantify this problem. This parameter, which we call the bus line resistance (RB), reflects the severity of the metallization deficiency. The bus line resistance distribution was measured on transistors from three wafers having, respectively, low resistance (~1.0 ¿), medium resistance (~1.4 ¿), and high resistance (~2.0 ¿). The variability in all three distributions is approximately ±10%. This data indicates the cross-over metallization deficiency was prevalent across an entire wafer and not just some transistors on a wafer. A gate electromigration test was conducted to determine the effect of bus line resistance on time to failure. The drain and source contacts of the transistors were tied together at ground in this test. The gate was forward biased until a current density of 2×lO5A/cm2 was reached.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115740238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
RF Operational Life Test of Power GaAs FET Amplifiers 功率GaAs FET放大器的射频工作寿命测试
21st International Reliability Physics Symposium Pub Date : 1983-04-05 DOI: 10.1109/IRPS.1983.362000
R. B. Postal, K. Russell, D. D. Hyett
{"title":"RF Operational Life Test of Power GaAs FET Amplifiers","authors":"R. B. Postal, K. Russell, D. D. Hyett","doi":"10.1109/IRPS.1983.362000","DOIUrl":"https://doi.org/10.1109/IRPS.1983.362000","url":null,"abstract":"This paper describes the life testing of twenty-four 3/4-W, X-band, solid-state, three-stage power amplifiers through 24,000 hours. Sixteen actively driven modules were subjected to a temperature of 75°C for 24,000 hours, and eight modules started at 75°C for 8000 hours were tested at 125°C for 16,000 additional hours. Measurements of module output phase and amplitude were made at room temperature after each 1000 hours of test. No catastrophic failures occurred through 24,000 hours of testing, although one module exceeded failure limits in the 75°C test and six modules exceeded limits in the 125°C test. Average RF amplitude drift for the 75°C test modules is ¿0.31 dB, while standard deviation for RF phase is 9.0 degrees.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131306467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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