{"title":"直流磁控溅射AL-SI金属化的电迁移特性","authors":"F. Fischer, F. Neppl, H. Oppolzer, U. Schwabe","doi":"10.1109/IRPS.1983.361959","DOIUrl":null,"url":null,"abstract":"The residual gas dependence of the life time of dc magnetron-sputtered Al-Si (1.2%) interconnects under temperature/current stress was investigated. Whereas the interconnect life time decreased with increasing H2O partial pressure, it increased with O2 partial pressure up to 4×1O¿9 Torr. Narrow interconnects were more sensitive to the residual gas conditions during metal deposition than wide ones. The Al-Si films were further characterized with respect to microstructure, reflectivity and residual resistivity. Correlations between life time and Al-Si-properties available immediately after film deposition are discussed. The best correlation existed with the residual resistivity.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electromigration Characterization of DC Magnetron-Sputtered AL-SI Metallization\",\"authors\":\"F. Fischer, F. Neppl, H. Oppolzer, U. Schwabe\",\"doi\":\"10.1109/IRPS.1983.361959\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The residual gas dependence of the life time of dc magnetron-sputtered Al-Si (1.2%) interconnects under temperature/current stress was investigated. Whereas the interconnect life time decreased with increasing H2O partial pressure, it increased with O2 partial pressure up to 4×1O¿9 Torr. Narrow interconnects were more sensitive to the residual gas conditions during metal deposition than wide ones. The Al-Si films were further characterized with respect to microstructure, reflectivity and residual resistivity. Correlations between life time and Al-Si-properties available immediately after film deposition are discussed. The best correlation existed with the residual resistivity.\",\"PeriodicalId\":334813,\"journal\":{\"name\":\"21st International Reliability Physics Symposium\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1983-04-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"21st International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1983.361959\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"21st International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1983.361959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electromigration Characterization of DC Magnetron-Sputtered AL-SI Metallization
The residual gas dependence of the life time of dc magnetron-sputtered Al-Si (1.2%) interconnects under temperature/current stress was investigated. Whereas the interconnect life time decreased with increasing H2O partial pressure, it increased with O2 partial pressure up to 4×1O¿9 Torr. Narrow interconnects were more sensitive to the residual gas conditions during metal deposition than wide ones. The Al-Si films were further characterized with respect to microstructure, reflectivity and residual resistivity. Correlations between life time and Al-Si-properties available immediately after film deposition are discussed. The best correlation existed with the residual resistivity.
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