New EPROM Data-Loss Mechanisms

N. Mielke
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引用次数: 44

Abstract

Data-loss mechanisms in present-generation EPROMs have been studied. Defect-related data loss is primarily due to interpoly-oxide defects. This is a change from the previous generation and introduces a new EPROM failure mode--column data loss. Contamination-compensation is found to be due as much to field-driven motion as to diffusion, and one result is that contaminated regions can exhibit charge gain as well as charge loss. Intrinsic charge loss is attributed to detrapping of electrons from the oxide layers rather than to loss of stored charge, suggesting that with proper screening of defects EPROM data retention is effectively unlimited.
新的EPROM数据丢失机制
研究了当前一代eprom中的数据丢失机制。缺陷相关的数据丢失主要是由于内插氧化物缺陷。与上一代相比,这是一个变化,并引入了一种新的EPROM故障模式——列数据丢失。污染补偿被发现是由于场驱动的运动和扩散,一个结果是污染区域可以表现出电荷增益和电荷损失。固有电荷损失归因于氧化层的电子脱失,而不是存储电荷的损失,这表明通过适当的缺陷筛选,EPROM数据保留实际上是无限的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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