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A New Gate Length Dependent Threshold Voltage Instability in Plastic Encapsulated Scaled CMOS Devices 一种新的基于栅极长度的塑料封装CMOS器件阈值电压不稳定性
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361962
M. Noyori, Y. Nakata, S. Kuninobu
{"title":"A New Gate Length Dependent Threshold Voltage Instability in Plastic Encapsulated Scaled CMOS Devices","authors":"M. Noyori, Y. Nakata, S. Kuninobu","doi":"10.1109/IRPS.1983.361962","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361962","url":null,"abstract":"In order to evaluate the reliability of plastic encapsulated scaled CMOS devices, accelerated tests have been conducted. As a result, a new gate length dependent threshold voltage shift, which is approximately proportional to the reciprocal of the gate length, has been found. This paper describes the characteristics and mechanism of this phenomenon.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130178156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thickness Dependence of Dielectric Breakdown Failure of Thermal SiO2 Films 热SiO2薄膜介电击穿失效的厚度依赖性
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361982
K. Yamabe, K. Taniguchi, Y. Matsushita
{"title":"Thickness Dependence of Dielectric Breakdown Failure of Thermal SiO2 Films","authors":"K. Yamabe, K. Taniguchi, Y. Matsushita","doi":"10.1109/IRPS.1983.361982","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361982","url":null,"abstract":"Thickness dependence of total dielectric breakdown failure fraction of thermal SiO2 films has a minimum value at around l10A and a maximum value at around 400A. It is concluded that two main origins of dielectric breakdown failures of thin SiO2 film are surface contamination prior to gate oxidation and microdefects in Si substrates.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127392923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Rate-Determining Factor of Aluminum Corrosion and a Rapid Method of Assessing the Moisture Resistance of Plastic Encapsulated LSI 铝腐蚀速率决定因素及塑料封装LSI耐湿性快速评定方法
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361965
K. Tsubosaki, Y. Wakashima, N. Nagasima
{"title":"Rate-Determining Factor of Aluminum Corrosion and a Rapid Method of Assessing the Moisture Resistance of Plastic Encapsulated LSI","authors":"K. Tsubosaki, Y. Wakashima, N. Nagasima","doi":"10.1109/IRPS.1983.361965","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361965","url":null,"abstract":"New information about the aluminum corrosion of plastic encapsuled LSI was derived from measuring the leakage current on the die surface. Aluminum corrosion at temperature/humidity tests depends upon the water film produced at the interface between the molding resin and die. The moisture resistance of plastic encapsulated LSI can be rapidly evaluated by electrical leakage which can be related to water film formation.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130541051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Unique Observations on Moisture Analysis: "Consumer" and Analyst 对水分分析的独特观察:“消费者”和分析师
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361995
R. Lowry
{"title":"Unique Observations on Moisture Analysis: \"Consumer\" and Analyst","authors":"R. Lowry","doi":"10.1109/IRPS.1983.361995","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361995","url":null,"abstract":"","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"39 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121004125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rapid Assessment of the Humidity Dependence of IC Failure Modes by Use of HAST 利用HAST快速评估IC失效模式的湿度依赖性
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361963
J. E. Gunn, Robert E. Camenga, Sushil K. Malik
{"title":"Rapid Assessment of the Humidity Dependence of IC Failure Modes by Use of HAST","authors":"J. E. Gunn, Robert E. Camenga, Sushil K. Malik","doi":"10.1109/IRPS.1983.361963","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361963","url":null,"abstract":"Extending the psychrometric region of temperature/humidity testing beyond the 100°C/1 atmosphere pressure standard, presents a series of new concerns. To address these concerns, a three-phase study was conducted. Phase 1 of the study was designed to assess first order moisture effects; e.g., the role of relative humidity (R.H.) and vapor pressure in the HAST environment. To quantify the results obtained, humidity rate constants of an exponential failure rate model were determined in Phase 2. The final phase describes an application to a DRAM product qualification.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122445396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Aluminum Conductor Line Corrosion 铝导体线路腐蚀
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361960
V. Bhide, J. M. Eldridge
{"title":"Aluminum Conductor Line Corrosion","authors":"V. Bhide, J. M. Eldridge","doi":"10.1109/IRPS.1983.361960","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361960","url":null,"abstract":"Effects of P2O5 concentration on the surface conductivity of Phospho Silicate Glass (PSG) films and the attendant corrosion of Al conductor lines on the PSG was investigated using various Temperature-Humidity-Bias conditions. These results will be presented, along with those obtained using various techniques to increase the passivity of the metal, PSG surface modification and conformal die coating.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128522839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Aluminum Electromigration Under Pulsed D.C. Conditions 脉冲直流条件下铝的电迁移
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361958
J. Towner, E. P. van de Ven
{"title":"Aluminum Electromigration Under Pulsed D.C. Conditions","authors":"J. Towner, E. P. van de Ven","doi":"10.1109/IRPS.1983.361958","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361958","url":null,"abstract":"Aluminum thin films were stressed under constant and pulsed DC conditions. The pulsed tests were performed at a frequency of 1kHz and duty cycles of 25%, 50%, and 75%. A peak current density of 2 × 106 A/cm2 was used. To compare conductor lifetimes under constant and pulsed conditions and to determine the effect of current pulsing on the activation energy for electromigration, tests were performed from 125°C to 300°C. Thermal cycling, resulting from current pulsing, was minimized by testing whole, patterned wafers directly on the heated stage of a probe station. Conductor lifetime is found to increase as duty cycle decreases. The amount of improvement is more than a correction for on-time would predict. The lifetime under pulsed DC conditions increases inversely with the square of the duty cycle. Pulse frequency has no effect, as shown by additional tests by 1OHz and 20kHz. A model is developed to explain this phenomena.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127886460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Voids, Cracks, and Hot Spots in Die Attach 模具上的空洞、裂纹和热点
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361974
R. Carlson, A. Yerman, J. Burgess, C. Neugebauer
{"title":"Voids, Cracks, and Hot Spots in Die Attach","authors":"R. Carlson, A. Yerman, J. Burgess, C. Neugebauer","doi":"10.1109/IRPS.1983.361974","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361974","url":null,"abstract":"The operational life of high power device packages is often limited by metallurgical fatigue of soft solder layers used as joining materials in the package construction. During package fabrication, the solder layers may have voids or cracks which can spread during subsequent operational temperature cycling. To explain the observed range of thermal and electrical resistances after die attach and operation, two types of voids (cracks) are postulated. For one type in which thermal but not electrical conduction is impeded by the void, hot temperature spots form above the void. For the other type in which both thermal and electrical conduction are impeded above the void, there are no hot spots, but the current conducting area is limited, increasing the voltage drops. Experiments to verify these idealized void types are described.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130540542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Reliability Evaluation of Plessey Low Noise Gallium Arsenide Field Effect Transistors Plessey低噪声砷化镓场效应晶体管可靠性评估
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.362002
G. Brydon, B. Caplen
{"title":"Reliability Evaluation of Plessey Low Noise Gallium Arsenide Field Effect Transistors","authors":"G. Brydon, B. Caplen","doi":"10.1109/IRPS.1983.362002","DOIUrl":"https://doi.org/10.1109/IRPS.1983.362002","url":null,"abstract":"An evaluation programme carried out on the Plessey Low Noise Gallium Arsenide Field Effect Transistors GAT 5 and GAT 6 is described. The programme conformed to the European Space Agency (ESA) requirements defined in QRC50G, Guidelines for the Selection, Evaluation, Screening and Lot Acceptance of Non-Standard Electronic, Electric and Electromechanical Parts. The purpose of the evaluation programme was to establish the reliability of the devices and qualify them for use in Space applications. Results obtained for the various tests are given together with an analysis of the data and failure analysis performed on device failures. An MTTF of 3 × 107 hours was obtained for the GAT 5 manufactured with aluminium gate metallisation and gold wire bonding. An MTTF of 1 × 108 hours was obtained for the GAT 6 which used titanium/aluminium gate metallisation and aluminium wire bonding to the gate pads.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"306 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115445510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Catastrophic Burn Out in Power VDMOS Field-Effect Transistors 功率VDMOS场效应晶体管的灾难性烧毁
21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361980
W. Slusark, R. J. Laurie, G. Schnable, J. Neilson, E. Finn
{"title":"Catastrophic Burn Out in Power VDMOS Field-Effect Transistors","authors":"W. Slusark, R. J. Laurie, G. Schnable, J. Neilson, E. Finn","doi":"10.1109/IRPS.1983.361980","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361980","url":null,"abstract":"Power vertical double-diffused MOS field-effect transistors (VDMOS) are finding wide use in satellite applications. In particular, IRF-l5O transistors (HEXFETs) have been designed into an electronic power conditioner (EPC) for a commercial C-band communications satellite with a ten-year mission. In this application, these devices are switched at a 50 kHz rate between the conducting and blocking state. During testing of prototype electronic power conditioners, catastrophic failures were encountered in these VDIMOS transistors. The failures were electrically characterized as low values of the drain-source resistance in the \"Off\" or blocking state. Analysis of the failed devices showed minimal physical evidence of damage, with the damage generally confined to three or four hexagonal cells (HEX) located adjacent to one another. In some cases, there was no visual evidence of damage to the device. Failure sites, when present, were always located near a gate stripe. A review of the application use conditions of the device within the EPC indicated that the drain-source was driven negative as the device was switching from the conducting to the blocking state. This results in the body-drain diode of the device (with a rated current of 28 amperes) being turned \"On\" and conducting a maximum of 3 amperes. The negative drain-source voltage is followed by a rapidly rising positive voltage as the device turns \"Off\". These conditions were reproduced in the laboratory. Failures identical to those encountered in the EPC were observed when the following three conditions were met: 1. The body-drain diode must be turned \"On\".","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"215 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116152711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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