利用HAST快速评估IC失效模式的湿度依赖性

J. E. Gunn, Robert E. Camenga, Sushil K. Malik
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引用次数: 22

摘要

将温度/湿度测试的湿度测量区域扩展到100°C/1大气压标准之外,提出了一系列新的问题。为了解决这些问题,进行了一项三期研究。研究的第一阶段旨在评估一级水分效应;例如,相对湿度(R.H.)和蒸汽压在HAST环境中的作用。为了量化得到的结果,在第二阶段确定了指数失效率模型的湿度率常数。最后一个阶段描述了DRAM产品认证的应用程序。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Rapid Assessment of the Humidity Dependence of IC Failure Modes by Use of HAST
Extending the psychrometric region of temperature/humidity testing beyond the 100°C/1 atmosphere pressure standard, presents a series of new concerns. To address these concerns, a three-phase study was conducted. Phase 1 of the study was designed to assess first order moisture effects; e.g., the role of relative humidity (R.H.) and vapor pressure in the HAST environment. To quantify the results obtained, humidity rate constants of an exponential failure rate model were determined in Phase 2. The final phase describes an application to a DRAM product qualification.
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