Rapid Assessment of the Humidity Dependence of IC Failure Modes by Use of HAST

Abstract

Extending the psychrometric region of temperature/humidity testing beyond the 100°C/1 atmosphere pressure standard, presents a series of new concerns. To address these concerns, a three-phase study was conducted. Phase 1 of the study was designed to assess first order moisture effects; e.g., the role of relative humidity (R.H.) and vapor pressure in the HAST environment. To quantify the results obtained, humidity rate constants of an exponential failure rate model were determined in Phase 2. The final phase describes an application to a DRAM product qualification.