21st International Reliability Physics Symposium最新文献_第5页

The Effect of Entrapped Krypton 85 Gas on Device Reliability 氪85气体夹持对设备可靠性的影响

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361968

D. Fisch, T. Mozdzen, Gerow Roberts

引用次数: 0

A Degradation Mechanism for Threshold Voltage Asymmetry and Subthreshold Leakage Slope with Reliability Implications 阈值电压不对称和亚阈值泄漏斜率退化机制及其可靠性影响

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361992

M. Luciano, W. Abadeer, T. Roy, J. M. Bauer, P. J. Czahor

引用次数: 1

An Appraisal of High Temperature Humidity Stress Tests for Assessing Plastic Encapsulated Semiconductor Components 评价塑料封装半导体元件的高温湿应力试验

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361964

R. Merrett, J. P. Bryant, R. Studd

{"title":"An Appraisal of High Temperature Humidity Stress Tests for Assessing Plastic Encapsulated Semiconductor Components","authors":"R. Merrett, J. P. Bryant, R. Studd","doi":"10.1109/IRPS.1983.361964","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361964","url":null,"abstract":"Very high temperature, high humidity lifetests and saturated storage ('pressure pot') tests are increasingly being adopted as rapid replacements for the standard 85°C/85% RH lifetests used to assess the susceptibility of plastic encapsulated ICs to moisture. It has also been suggested that a reduction in test time could be achieved by the detection of debonding between the plastic and the die, since debonding may be required to initiate the processes which eventually lead to failure. To evaluate the alternative techniques, CMOS from 6 manufacturers has been subjected to a series of biased lifetests up to 131°C/90% RH and to unbiased saturated storage tests up to 131°C, and a capacitance technique was used to detect the onset of debonding between the plastic and the die. It is concluded that debonding is only a necessary precondition for functional failure during (i) saturated storage tests and (ii) lifetests on specimens having a passivation which is defect free and either contains no phosphorus or has a low phosphorus content, and that in both cases corrosion will be confined to the bond pads. Such corrosion was produced by lifetests on oxide-passivated components, but the majority of failures during these tests were associated with two other corrosion features, namely localised corrosion of passivated tracks and uniform corrosion of all cathodic tracks, neither of which required debonding. There is evidence that the localised corrosion is associated with passivation defects and the uniform corrosion with the presence of phosphorus.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126037664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Imaging Latch-Up Sites in LSI CMOS with a Laser Photoscanner 用激光扫描仪成像LSI CMOS中的锁存位点

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361971

D. J. Burns, Jeffrey M. Kendall

引用次数: 12

The Application of a Dynamic Technique to the Study of Electromigration Kinetics 动态技术在电迁移动力学研究中的应用

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361955

R. Pasco, J. A. Schwarz

{"title":"The Application of a Dynamic Technique to the Study of Electromigration Kinetics","authors":"R. Pasco, J. A. Schwarz","doi":"10.1109/IRPS.1983.361955","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361955","url":null,"abstract":"A temperature-ramp technique is presented that enables determination of the kinetic parameters for electromigration processes. With this method, pre-exponentials and activation energies can be measured in a single experiment requiring a few hours. The technique is applicable to both practical and fundamental studies of electromigration. For example, in terms of the former, reliability factors for conductor lifetimes can be readily determined. As far as the latter, new conductor compositions can be rapidly screened to ascertain their electromigration behavior. Temperature-ramp Resistance Analysis to Characterize Electromigration (TRACE) has been applied to thin-film aluminum conductors. Results have yielded activation energies in agreement with literature values. Furthermore, the TRACE results have been used, along with resistivity results from the literature, to determine the current density effect on the pre-exponential factor. The value of the current density exponent thus determined is in accord with the range reported in the literature for Mean Time to Failure (MTF) experiments. The TRACE technique has also been used to determine the effect of hydrogen ambients on electromigration damage (EMD) kinetics for both aluminum and Al-2%Cu thin-film conductors. The effects of hydrogen ambients on EMD kinetics have been determined to be more complex than suggested by prior results in the literature.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121949384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Mo-Gate MOS Devices Stability Under Long-Term Positive Bias-Temperature Stressing Test MOS栅极MOS器件在长期正偏温应力试验下的稳定性

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361981

T. Nozaki, H. Okabayashi, K. Higuchi

引用次数: 1

The Adsorption of Water on Mietallic Packages 水在金属包装上的吸附

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361961

W. Swartz, J. Linn, J. M. Ammons, M. Kovac, K. Wilson

引用次数: 6

A Source of Degradation of Plastic Encapsulated Devices 塑料封装装置降解的一个来源

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361988

G. Kalmár, Z. Nényei

{"title":"A Source of Degradation of Plastic Encapsulated Devices","authors":"G. Kalmár, Z. Nényei","doi":"10.1109/IRPS.1983.361988","DOIUrl":"https://doi.org/10.1109/IRPS.1983.361988","url":null,"abstract":"Some chemical degradation effects in plastic encapsulated semiconductor devices are analysed by the use of pressurecooker tests. After summarising the possible sources of chlorine contamination and its degradation effects, our new results are presented indicating that chlorine contamination of semiconductor devices can also be caused by some washing and cleaning operations. Considering the sensitivity of semiconductor devices in plastic package against different chlorinated hydrocarbons, a group of safe cleaning agents is defined and recomended to device users and manufacturers. A CONSIDERABLE ATTENTION HAS BEEN PAID recently to the effects and origins of chlorine contamination of semiconductor devices. Failure analysis with dedicated instruments /EDS, SEM/ have shown the presence of chlorine in several degraded devices. It has been found, that the interconnecting metallization of semiconductor devices /Au-Al and Al-Al systems/ corrodes incomparably faster if chlorine impurities are present in addition to moisture traces. As possible sources of the chloride contamination mostly impurities, originating from the chip technológy and assembly or the encapsulat ing plastic material itself /-and in special cases , at devices built in circuits, the salt envia ronment-/ has been made responsible. 1,2 In this paper we intend to call attention to some physicochemical and chemical conditions which shall be observed in order to avoid chloride contamination during the cleaning, degreasing and plating operations of the plastic encapsulated devices, and also at post solder cleaning of assembled printed circuit boards.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128420527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Implications QF a Model for Optimum Burn-In QF模型的最优老化

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361998

A. Wager, D. L. Thompson, A. Forcier

引用次数: 6

Effects of Substrate Thermal Characteristics on the Electromigration Behavior of Al Thin Film Conductors 衬底热特性对铝薄膜导体电迁移行为的影响

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI: 10.1109/IRPS.1983.361956

C. J. Wu, M. McNutt

引用次数: 9