Effects of Substrate Thermal Characteristics on the Electromigration Behavior of Al Thin Film Conductors

C. J. Wu, M. McNutt
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引用次数: 9

Abstract

Electromigration failure in aluminum conductors is strongly temperature activated, and reliable levels of current density do significantly raise the conductor temperature. However, the temperature increase and its ultimate effect on the conductor lifetime is related to device and substrate structure and to the pulsewidth and duty cycle of pulsed currents. This work describes simple but accurate models for thermal buildup in typical IC structures due to both constant and pulsed currents. The results are then included in predictive models for pulsed current electromigration lifetime. These models include temperature cycling and its effect on damage relaxation between pulses, and they are built up in a modular fashion from the basic constant current model. Experimental data is shown to support the theory.
衬底热特性对铝薄膜导体电迁移行为的影响
铝导体中的电迁移失效是强烈的温度激活,可靠的电流密度水平确实显著提高了导体的温度。然而,温度升高及其对导体寿命的最终影响与器件和衬底结构以及脉冲电流的脉宽和占空比有关。这项工作描述了简单而准确的模型,用于典型集成电路结构中由于恒定电流和脉冲电流而产生的热积累。结果被包括在脉冲电流电迁移寿命的预测模型中。这些模型包括温度循环及其对脉冲间损伤松弛的影响,它们是在基本恒流模型的基础上以模块化的方式建立起来的。实验数据证实了这一理论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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