一种新的基于栅极长度的塑料封装CMOS器件阈值电压不稳定性

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI:10.1109/IRPS.1983.361962

M. Noyori, Y. Nakata, S. Kuninobu

{"title":"一种新的基于栅极长度的塑料封装CMOS器件阈值电压不稳定性","authors":"M. Noyori, Y. Nakata, S. Kuninobu","doi":"10.1109/IRPS.1983.361962","DOIUrl":null,"url":null,"abstract":"In order to evaluate the reliability of plastic encapsulated scaled CMOS devices, accelerated tests have been conducted. As a result, a new gate length dependent threshold voltage shift, which is approximately proportional to the reciprocal of the gate length, has been found. This paper describes the characteristics and mechanism of this phenomenon.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1983-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A New Gate Length Dependent Threshold Voltage Instability in Plastic Encapsulated Scaled CMOS Devices\",\"authors\":\"M. Noyori, Y. Nakata, S. Kuninobu\",\"doi\":\"10.1109/IRPS.1983.361962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to evaluate the reliability of plastic encapsulated scaled CMOS devices, accelerated tests have been conducted. As a result, a new gate length dependent threshold voltage shift, which is approximately proportional to the reciprocal of the gate length, has been found. This paper describes the characteristics and mechanism of this phenomenon.\",\"PeriodicalId\":334813,\"journal\":{\"name\":\"21st International Reliability Physics Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1983-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"21st International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1983.361962\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"21st International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1983.361962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

为了评估塑料封装的CMOS器件的可靠性，进行了加速试验。结果，发现了一个新的与栅极长度相关的阈值电压位移，它与栅极长度的倒数近似成正比。本文阐述了这一现象的特点和机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A New Gate Length Dependent Threshold Voltage Instability in Plastic Encapsulated Scaled CMOS Devices

In order to evaluate the reliability of plastic encapsulated scaled CMOS devices, accelerated tests have been conducted. As a result, a new gate length dependent threshold voltage shift, which is approximately proportional to the reciprocal of the gate length, has been found. This paper describes the characteristics and mechanism of this phenomenon.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

21st International Reliability Physics Symposium

自引率

0.00%

发文量