辐射诱发软误差和浮门存储器

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI:10.1109/IRPS.1983.361979

J. Caywood, B. Prickett

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引用次数: 13

摘要

讨论了电离辐射诱发浮栅存储器失效的新机制。这种机制被称为“固定误差”，并对其进行了一些详细的建模。实验验证了陶瓷封装材料发射α粒子的MTBF > 10万年的计算结果。讨论了器件缩放对这一机制的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation-Induced Soft Errors and Floating Gate Memories

A new failure mechanism which may be induced in floating gate memories by ionizing radiation is discussed. This mechanism, which is designated a "firm error", is modeled in some detail. Calculations which show that the MTBF for alpha particles emitted by ceramic packaging materials is > 100,000 years are verified experimentally. The effect of device scaling on this mechanism is also discussed.

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21st International Reliability Physics Symposium

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