{"title":"GaAs MESFET逻辑电路的可靠性","authors":"M. Namordi, W. White","doi":"10.1109/IRPS.1983.362003","DOIUrl":null,"url":null,"abstract":"Twelve depletion mode GaAs MESFET logic circuits were subjected to a step-stress life test. Each circuit consisted of an 11-stage ring oscillator with one buffer stage. Both BFL and SDFL circuits with Vp ¿ ¿2.0 V and ¿1.0 V were represented. The circuits were operated for 500 hours at each of eight temperature stress steps ranging between 25° and 200°C with 25°C increments. No chip failures occurred upon completion of the life test. Reasonable interpretation of these results suggests that GaAs MESFET logic circuits should be very reliable.","PeriodicalId":334813,"journal":{"name":"21st International Reliability Physics Symposium","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1983-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability of GaAs MESFET Logic Circuits\",\"authors\":\"M. Namordi, W. White\",\"doi\":\"10.1109/IRPS.1983.362003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Twelve depletion mode GaAs MESFET logic circuits were subjected to a step-stress life test. Each circuit consisted of an 11-stage ring oscillator with one buffer stage. Both BFL and SDFL circuits with Vp ¿ ¿2.0 V and ¿1.0 V were represented. The circuits were operated for 500 hours at each of eight temperature stress steps ranging between 25° and 200°C with 25°C increments. No chip failures occurred upon completion of the life test. Reasonable interpretation of these results suggests that GaAs MESFET logic circuits should be very reliable.\",\"PeriodicalId\":334813,\"journal\":{\"name\":\"21st International Reliability Physics Symposium\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1983-04-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"21st International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1983.362003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"21st International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1983.362003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Twelve depletion mode GaAs MESFET logic circuits were subjected to a step-stress life test. Each circuit consisted of an 11-stage ring oscillator with one buffer stage. Both BFL and SDFL circuits with Vp ¿ ¿2.0 V and ¿1.0 V were represented. The circuits were operated for 500 hours at each of eight temperature stress steps ranging between 25° and 200°C with 25°C increments. No chip failures occurred upon completion of the life test. Reasonable interpretation of these results suggests that GaAs MESFET logic circuits should be very reliable.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
