GaAlAs可见激光器中暗缺陷形成的新失效机制

21st International Reliability Physics Symposium Pub Date : 1983-04-01 DOI:10.1109/IRPS.1983.361978

S. Todoroki, T. Takahashi, K. Aiki, H. Uchida

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引用次数: 0

摘要

利用扫描电镜电子束感应电流模式研究了GaAlAs可见激光器中与退化有关的暗缺陷。在条纹区边缘观察到两种新的缺陷模式:暗区和暗线。这些缺陷与器件结构和外延片的晶化有关。

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A New Failure Mechanism Related to the Formation of Dark Defects in GaAlAs Visible Lasers

Dark defects related to degradation in GaAlAs visible lasers were investigated by using an electron beam induced current mode of a SEM. Two new modes of defects, dark regions and <100> dark lines, were observed bordering the edge of the stripe regions. These defects are related to a device structure and the crystallization of epitaxial wafers.

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21st International Reliability Physics Symposium

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