A New Failure Mechanism Related to the Formation of Dark Defects in GaAlAs Visible Lasers

Abstract

Dark defects related to degradation in GaAlAs visible lasers were investigated by using an electron beam induced current mode of a SEM. Two new modes of defects, dark regions and <100> dark lines, were observed bordering the edge of the stripe regions. These defects are related to a device structure and the crystallization of epitaxial wafers.