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2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.最新文献

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RF-Schottky diodes with Ni silicide for mixer applications 射频肖特基二极管与硅化镍混合应用
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196685
M. Morschbach, C. Schollhorn, M. Oehme, E. Kasper
{"title":"RF-Schottky diodes with Ni silicide for mixer applications","authors":"M. Morschbach, C. Schollhorn, M. Oehme, E. Kasper","doi":"10.1109/SMIC.2003.1196685","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196685","url":null,"abstract":"In this paper n- and p-doped Schottky diode with NiSi (nickel silicide) as contact material will be compared with Schottky diodes with Al (aluminum) contact. It is shown that a useable p-doped Schottky diode with high cut-off frequency could be achieved if nickel silicide is used as contact material. Also is proved that nickel silicide, if used as contact material, decreases the series resistance in cause of a reduced contact resistance.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125910399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
High-Q inductors and transmission lines on 20 /spl Omega/.cm Si using wafer-level packaging technology 高q电感器和20 /spl ω /传输线。cm Si采用晶圆级封装技术
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196682
G. Carchon, Xiao Sun, W. De Raedt
{"title":"High-Q inductors and transmission lines on 20 /spl Omega/.cm Si using wafer-level packaging technology","authors":"G. Carchon, Xiao Sun, W. De Raedt","doi":"10.1109/SMIC.2003.1196682","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196682","url":null,"abstract":"High Q on-chip inductors and low loss on-chip interconnects and transmission lines are an important roadblock for the further development of Si-based technologies at RF and microwave frequencies. In this paper, inductors are realised on 20 /spl Omega/.cm Si wafers using thin-film Wafer-Level Packaging (WLP) technology: two low K benzo-cyclobutene (BCB, /spl epsiv//sub r/=2.65) dielectric layers and a thick Cu interconnect layer are deposited on floating Si substrates. Inductors with 5/spl mu/m minimum lines and spaces are demonstrated for a 5/spl mu/m thick Cu layer, hereby leading to very compact and high performance inductors: maximum Q-factors of 25 have been obtained for inductances in the range of 1 to 5 nH. It is shown how Q-factor and resonance frequency vary as a function of the inductor layout parameters and the thickness of the BCB and Cu layers. The realised 50 /spl Omega/ CPW lines (lateral dimension of 40 /spl mu/m) have a measured loss of only 0.2 dB/mm@25 GHz. A good agreement between measured and simulated performance has been obtained.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123553031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The design and operation of TeraHertz sources based on silicon germanium alloys 基于硅锗合金的太赫兹光源的设计与运行
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196654
J. Kolodzey, T. Adam, R. Troeger, P. Lv, S. Ray, G. Looney, A. Rosen, M. Kagan, I. Yassievich
{"title":"The design and operation of TeraHertz sources based on silicon germanium alloys","authors":"J. Kolodzey, T. Adam, R. Troeger, P. Lv, S. Ray, G. Looney, A. Rosen, M. Kagan, I. Yassievich","doi":"10.1109/SMIC.2003.1196654","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196654","url":null,"abstract":"During the past few years, vigorous studies have begun on semiconductor devices that generate and detect frequencies from 0.3 - 10 TeraHertz (1000 30 /spl mu/m). Previous THz sources were based on electrical methods using transistor oscillators (to 0.5 THz), diode frequency multipliers (to 2.5 THz), and femtosecond optical pulse switches. Infrared emitters such as the Quantum Cascade Laser in the III-V semiconductors have been difficult to extend to THz frequencies due to reststrahlen absorption by polar phonons. In contrast, Si has lower absorption and devices may be able to operate over a broader THz range than the III-V semiconductors. This report describes the fabrication and characterization of THz sources based on three different design approaches: intersubband transitions in Silicon Germanium quantum wells, resonant state transitions in boron-doped strained SiGe quantum wells, and dopant impurity transitions in doped Si layers.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"837 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116149112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
EM design of an isolated coplanar RE cross for MEMS switch matrix applications 用于MEMS开关矩阵的隔离共面RE交叉的电磁设计
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196695
W. Simon, A. Lauer, B. Schauwecker, A. Wien
{"title":"EM design of an isolated coplanar RE cross for MEMS switch matrix applications","authors":"W. Simon, A. Lauer, B. Schauwecker, A. Wien","doi":"10.1109/SMIC.2003.1196695","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196695","url":null,"abstract":"The EM design of a coplanar RF cross with well isolated signal paths in a frequency range from DC up to 40 GHz is described. The cross is designed for a MEMS switch matrix where the different signal paths have to be isolated against each other. This allows one to have several 'on-state' signal paths at the same time in the matrix. One signal path is routed via an underpath metallisation while the other signal path is routed with an air bridge. A metal sheet connecting both coplanar ground metallisations is used as a shield to achieve good isolation. The optimisation of all elements from the cross is done with a full wave FDTD simulator. The achieved isolation between the two signal paths of the coplanar RF cross is above 40 dB up to 40 GHz. For both signal paths is in measurement and simulation for frequencies up to 20 GHz the return loss better than 18 dB and the insertion loss is below 0.7 dB.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130356519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
RF-MEMS filters manufactured on silicon: key facts about bulk-acoustic-wave technology 在硅上制造的RF-MEMS滤波器:本体声波技术的关键事实
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196694
R. Aigner
{"title":"RF-MEMS filters manufactured on silicon: key facts about bulk-acoustic-wave technology","authors":"R. Aigner","doi":"10.1109/SMIC.2003.1196694","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196694","url":null,"abstract":"The working principle and performance of state-of-the-art Bulk-Acoustic-Wave (BAW) devices is reviewed. The importance for RF-filters in mobile phone applications is discussed and the benefit of silicon-based technologies highlighted. Challenges in manufacturing of BAWs are briefly reviewed. The most important performance parameters such as resonator bandwidth and Q-values - and their dependency on processing and design are described. Whether monolithic integration \"System-On-Chip\" together with RFICs or hybrid integration \"System-In-Package\" makes more sense is discussed. Examples of state-of-the-art in BAW filters in production and ramp-up status are presented.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121289609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
24 GHz high sensitivity downconverter using a commercial SiGe HBT MMIC foundry technology 采用商用SiGe HBT MMIC代工技术的24ghz高灵敏度下变频器
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196671
E. Sonmez, A. Trasser, P. Abele, F. Gruson, K. Schad, H. Schumacher
{"title":"24 GHz high sensitivity downconverter using a commercial SiGe HBT MMIC foundry technology","authors":"E. Sonmez, A. Trasser, P. Abele, F. Gruson, K. Schad, H. Schumacher","doi":"10.1109/SMIC.2003.1196671","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196671","url":null,"abstract":"The authors have demonstrated an integrated downconverter addressing the ISM-band at 24 GHz using a standard SiGe HBT MMIC process with an effective emitter width of 0.5 /spl mu/m. Extremely compact circuit layout and transistor structure optimization are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at the 24 GHz ISM band. The integrated components are a preamplifier and a mixer with an IF buffer. The conversion gain is determined to be 40 dB for an intermediate frequency of 100 MHz.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"1614 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131342361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impact of inter metal dielectric on the reliability of SiGe NPN HBTs after high temperature electrical operation 金属间介电介质对高温电气操作后SiGe NPN hbt可靠性的影响
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196686
K. Hoftnann, G. Bruegmann, M. Seck
{"title":"Impact of inter metal dielectric on the reliability of SiGe NPN HBTs after high temperature electrical operation","authors":"K. Hoftnann, G. Bruegmann, M. Seck","doi":"10.1109/SMIC.2003.1196686","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196686","url":null,"abstract":"The current gain (h/sub FE/) shift of SiGe NPN transistors after High Temperature Electrical Operation (HTEO) stress is delineated in the current investigation. The current gain of transistors (type A), using a high density plasma SiO/sub 2/ for planarization of the inter metal dielectric, decreases with stress time. The decrease of the current gain is caused by an enhanced recombination in the emitter base space charge region. The enhanced recombination results in an increase of the base current Ib. In contrast, the current gain of devices (type B), employing a spin on glass SiO/sub 2/ for planarization, increases due to hydrogen passivation of recombination centers on the polycrystalline Si/crystalline SiGe interface. The passivation of recombination centers causes a decrease of the base current. Also a time-to-failure extrapolation methodology for the creation of recombination centers in the emitter base space charge region is presented.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132450867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Noise performance scaling in high-speed silicon RF technologies 高速硅射频技术中的噪声性能缩放
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196659
D. Greenberg, S. Sweeney, B. Jagannathan, G. Freeman, D. Ahlgren
{"title":"Noise performance scaling in high-speed silicon RF technologies","authors":"D. Greenberg, S. Sweeney, B. Jagannathan, G. Freeman, D. Ahlgren","doi":"10.1109/SMIC.2003.1196659","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196659","url":null,"abstract":"SiGe HBT technology has evolved rapidly during the past several years through both scaling and structural enhancements, with each contributing to improved low-noise performance. Vertical scaling has increased f/sub T/ by 4/spl times/ between the 0.5 /spl mu/m and 0.13/spl mu/m generations, contributing to a 2.5 dB drop in noise figure at 26 GHz. At the same time, both lateral scaling as well as the move to a raised-extrinsic-base structure have reduced R/sub B/ by 4.5/spl times/, contributing an additional 1 dB F/sub min/ drop. The resulting 200GHz SiGe HBT achieves F/sub min/ and G/sub A/ values of 1.1 dB and 9 dB at 26 GHz, respectively, with a projected F/sub min/ of 3.1-3.5 dB at 60 GHz. Such performance suggests that silicon enjoys great potential to serve a range of emerging wireless applications at high frequencies.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"1200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125761879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A hybrid fabricated 40 GHz low phase noise SiGe push-push oscillator 一种混合制造的40 GHz低相位噪声SiGe推推振荡器
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196672
R. Wanner, G. Olbrich
{"title":"A hybrid fabricated 40 GHz low phase noise SiGe push-push oscillator","authors":"R. Wanner, G. Olbrich","doi":"10.1109/SMIC.2003.1196672","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196672","url":null,"abstract":"We present a 40 GHz push-push oscillator based on SiGe HBTs. The circuit is fabricated in thin film technology on an alumina substrate. It provides an output power of -9 dBm at 40 GHz and two differential outputs with -6 dBm each at the fundamental frequency of 20 GHz. The oscillator shows an excellent phase noise performance and reaches -108 dBc/Hz at the second harmonic frequency of 40 GHz and -114 dBc/Hz at the fundamental frequency of 20 GHz Both values are measured at an offset frequency of I MHz.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125858601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Novel technological solution to improve both Q factor and losses of passive circuits on low resistivity silicon 改进低阻硅无源电路Q因数和损耗的新技术方案
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196683
K. Grenier, F. Bouchriha, D. Dubuc, P. Pons, J. Graffeuil, R. Plana
{"title":"Novel technological solution to improve both Q factor and losses of passive circuits on low resistivity silicon","authors":"K. Grenier, F. Bouchriha, D. Dubuc, P. Pons, J. Graffeuil, R. Plana","doi":"10.1109/SMIC.2003.1196683","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196683","url":null,"abstract":"This paper deals with a novel technological solution based on the use of surface micromachining in coplanar slots that are filled with a thick organic dielectric layer. This technique enables both Q factor and losses improvements of passive circuits realized on low resistivity silicon substrate. It permits indeed to achieve much better attenuation level without an important decrease of the effective permittivity.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127397660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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