2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.最新文献

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Analysis of termination impedance effects on the linearity of 5 GHz CMOS radio frequency amplifiers 终端阻抗对5ghz CMOS射频放大器线性度的影响分析
J. Fairbanks, L. Larson
{"title":"Analysis of termination impedance effects on the linearity of 5 GHz CMOS radio frequency amplifiers","authors":"J. Fairbanks, L. Larson","doi":"10.1109/SMIC.2003.1196704","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196704","url":null,"abstract":"The high-frequency nonlinear distortion of a small-signal CMOS common-source amplifier stage is analyzed as a function of bias and termination impedance at 5 GHz. The results developed can be applied to wireless RF circuit design applications.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132507848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Scaleable non linear low frequency noise model of SiGe HBT SiGe HBT的可缩放非线性低频噪声模型
A. Rennane, L. Bary, G. Niu, J. Cressler, J. Joseph, J. Graffeuil, R. Plana
{"title":"Scaleable non linear low frequency noise model of SiGe HBT","authors":"A. Rennane, L. Bary, G. Niu, J. Cressler, J. Joseph, J. Graffeuil, R. Plana","doi":"10.1109/SMIC.2003.1196702","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196702","url":null,"abstract":"This paper presents the low frequency noise behavior of advanced SiGe HBT's. It is investigated the influence of the Ge rate on the low frequency noise properties. We propose a scaleable non linear model that is compatible with commercial CAD platform.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123186350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An electrically tunable true-time-delay line on Si for a broadband noise radar 一种用于宽带噪声雷达的硅基电可调谐真延时线
P. Abele, R. Stephan, M. Birk, D. Behammer, H. Kibbel, A. Trasser, K. Schad, E. Sonmez, H. Schumacher
{"title":"An electrically tunable true-time-delay line on Si for a broadband noise radar","authors":"P. Abele, R. Stephan, M. Birk, D. Behammer, H. Kibbel, A. Trasser, K. Schad, E. Sonmez, H. Schumacher","doi":"10.1109/SMIC.2003.1196687","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196687","url":null,"abstract":"A short range broad band noise radar system using an electrically tunable true-time-delay line in silicon is presented. The delay line has to cover the interested scanning range (here 2.3 m) and show low dispersion. The delay line consists of discrete switchable lines realized in hybrid form and a on chip continual tunable coplanar delay line. The noise radar operates at the X-band (10.7 GHz-12 GHz). Measurements are presented with a fixed obstacle in the scanned range.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125081953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Planar inductors with subdivided conductors for reducing eddy current effects 具有细分导体的平面电感器,用于减少涡流效应
M. Peter, H. Hein, F. Oehler, P. Baureis
{"title":"Planar inductors with subdivided conductors for reducing eddy current effects","authors":"M. Peter, H. Hein, F. Oehler, P. Baureis","doi":"10.1109/SMIC.2003.1196680","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196680","url":null,"abstract":"In this work, a method for reducing eddy current effects in planar inductors is presented. This patent pending method has already been demonstrated to be effective for microstrip lines. In this work we present measurements that demonstrate that the maximum quality factor of a planar inductor in a standard 0.35 /spl mu/m CMOS process with three metal layers could be improved by up to 35% to a value of 8.0.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132714356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
PN junction integrated varactors for RF applications at different standard frequencies PN结集成变容管用于不同标准频率的射频应用
I. Gutiérrez, J. García, N. Sainz, J. R. Sendra, J. de No, A. Hernández
{"title":"PN junction integrated varactors for RF applications at different standard frequencies","authors":"I. Gutiérrez, J. García, N. Sainz, J. R. Sendra, J. de No, A. Hernández","doi":"10.1109/SMIC.2003.1196684","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196684","url":null,"abstract":"In this work, new structures based on the PN junction are presented for the design of integrated varactors. In order to optimize the ratio capacitance per unit area (C/A), two varactor geometries have been developed: interdigitated and cross structures. Varactors have been characterized with a specific measurement methodology. A library of varactors that can be used in different RF applications has been implemented with good quality factors and a tuning range around 30%.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133521419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Hybrid method for simulation of passive structures in RF-MMICs rf - mmic中被动结构仿真的混合方法
B. Broido, D. Lukashevich, P. Russer
{"title":"Hybrid method for simulation of passive structures in RF-MMICs","authors":"B. Broido, D. Lukashevich, P. Russer","doi":"10.1109/SMIC.2003.1196700","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196700","url":null,"abstract":"The exact modelling of the properties of transmission line structures in microwave monolithic integrated circuits (MMICs) requires full-wave modelling of the electromagnetic field in the semiconductor and insulator regions as well as within the conductors. The transverse dimensions of the transmission structures at the frequency above 10 GHz are comparable to the skin depth. Therefore the accurate simulation of the electromagnetic field inside the conductors is necessary. In this paper we combine the transmission line matrix (TLM) and mode matching (MM) methods for full-wave analysis of transmission lines and discontinuities in RF-MMICs.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116750013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A software-radio front-end for microwave applications 用于微波应用的软件无线电前端
M. Streifinger, T. Muller, J. Luy, Erwin Biebl
{"title":"A software-radio front-end for microwave applications","authors":"M. Streifinger, T. Muller, J. Luy, Erwin Biebl","doi":"10.1109/SMIC.2003.1196667","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196667","url":null,"abstract":"At microwave frequencies, in particular at frequencies beyond 10 GHz, no direct sampling receivers are available yet A look at the roadmap of the development of commercial analog-to-digital converters (ADC) shows clearly, that they can neither be expected in near future. We present a novel architecture, which is capable of direct sampling of band-limited signals at frequencies beyond 10 GHz by means of in over-sampling technique. The well-known Nyquist criterion states that wide-band digitisation of an RF-signal with a maximum frequency f requires a minimum sampling rate of 2/spl middot/f. But for a band-limited signal of bandwidth B the demands for the minimum sampling rate of the ADC relax to the value 2/spl middot/B. Employing a noise-forming sigma-delta ADC architecture even with a 1-bit-ADC a signal-to-noise ratio sufficient for many applications can be achieved. The key component of this architecture is the sample-and-hold switch. The required bandwidth of this switch must be well above 2/spl middot/f. We designed, fabricated and characterized a preliminary demonstrator for the ISM-band at 2.4 GHz employing silicon Schottky diodes as a switch and SiGe-based MMICs as impedance transformers and comparators. Simulated and measured results are presented.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"605 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123249309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Wafer level packaging solution for high performance microwave inductors on Si substrates 硅基板上高性能微波电感的晶圆级封装解决方案
S. Nuttinck, S. Pinel, J. Laskar
{"title":"Wafer level packaging solution for high performance microwave inductors on Si substrates","authors":"S. Nuttinck, S. Pinel, J. Laskar","doi":"10.1109/SMIC.2003.1196693","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196693","url":null,"abstract":"We report an innovative wafer level packaging solution for high performance microwave inductors on Si substrates. We present design rules for high-Q microwave inductors. Inductors fabricated on Si substrates using this technology exhibit Q's up to 50 in the C-band.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131574359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
5 GHz voltage controlled ring oscillator using source capacitively coupled current amplifier 采用源电容耦合电流放大器的5 GHz压控环形振荡器
R. Tao, M. Berroth
{"title":"5 GHz voltage controlled ring oscillator using source capacitively coupled current amplifier","authors":"R. Tao, M. Berroth","doi":"10.1109/SMIC.2003.1196665","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196665","url":null,"abstract":"A 5 GHz voltage controlled ring oscillator (VCO) has been designed using 0.18 /spl mu/m CMOS technology. Source Capacitively Coupled Current Amplifier (SC3A) is adopted to realize this VCO. Because of the band-pass characteristic of the SC3A, this VCO exhibits the low noise performance with a large tuning range. It can operate from 4.3 GHz up to 6.1 GHz with a phase noise of about -85 dBc/Hz at 1 MHz frequency offset. For the 2 V supply voltage, the power consumption is about 80 mW.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"61 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131755206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Analysis and design of MEMS and embedded components in silicon/LTCC packages using FDTD/MRTD for system-on-package applications (SOP) 基于系统级封装应用(SOP)的FDTD/MRTD分析和设计硅/LTCC封装中的MEMS和嵌入式元件
M. Tentzeris, N. Bushyager, J. Laskar, G. Zheng, J. Papapolymerou
{"title":"Analysis and design of MEMS and embedded components in silicon/LTCC packages using FDTD/MRTD for system-on-package applications (SOP)","authors":"M. Tentzeris, N. Bushyager, J. Laskar, G. Zheng, J. Papapolymerou","doi":"10.1109/SMIC.2003.1196689","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196689","url":null,"abstract":"The FDTD and MRTD full-wave numerical techniques are applied to the modeling and analysis of embedded components, such as MEMS, in silicon packages. Preliminary design rules are derived for minimized-crosstalk transmission lines, for a wideband compact transition, for a MEMS switch and that can be used in practical tuning applications and for a packaging adaptive antenna.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128258418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
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