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2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.最新文献

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Status and prospects of wireless communications 无线通信的现状与展望
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196664
J. Fenk
{"title":"Status and prospects of wireless communications","authors":"J. Fenk","doi":"10.1109/SMIC.2003.1196664","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196664","url":null,"abstract":"TDMA based digital systems like GSM for cellular and DECT for cordless applications have created an increasing market within Europe since 1992 and gained widespread acceptance also outside Europe. In the meantime the cellular based 2/2.5G network is already reaching its limit in some megalopolis. The 3G WCDMA based UMTS system starts in 2003 service and will reasonably increases the available bandwidth and throughput. It will also enable further increased data service up to 2.048 MBit. This presentation gives overview on the status and the prospects of these systems. The discussion is focused on system requirements and their influences on highly integrated RF ICs for GSM, DECT and UNITS. A brief overview about the technologies in use for this RF ICs will be given. The various trends of progress in integration will be shown together with the different advantages and disadvantages of the concepts in use. Furthermore, the challenges of increasing the level of integration and an outlook to future will be presented.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128265147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling avalanche multiplication for advanced high-speed SiGe bipolar transistors 先进高速SiGe双极晶体管雪崩倍增建模
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196658
M. Pfost, V. Kubrak, A. Romanyuk
{"title":"Modeling avalanche multiplication for advanced high-speed SiGe bipolar transistors","authors":"M. Pfost, V. Kubrak, A. Romanyuk","doi":"10.1109/SMIC.2003.1196658","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196658","url":null,"abstract":"For correct modeling of avalanche breakdown effects in bipolar transistors with the six transistor model, the multiplication factor M must be accurately described. However, as a simplification it is sometimes suggested to neglect its current dependence. We will show that this is not possible for advanced high-speed SiGe bipolar technologies. In this work, we present a practical model for M which takes the current into account as well. It allows simple parameter extraction and, moreover, can easily be used with standard circuit simulators. The model is verified for a fast pre-production SiGe technology by comparison to measurements.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134544999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Recent advances in CMOS circuits towards 40 Gb/s and 50 GHz CMOS电路迈向40 Gb/s和50 GHz的最新进展
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196673
W. Simburger, M. Tiebout, D. Kehrer, H. Wohlmuth, H. Knapp, M. Wurzer, M. Rest
{"title":"Recent advances in CMOS circuits towards 40 Gb/s and 50 GHz","authors":"W. Simburger, M. Tiebout, D. Kehrer, H. Wohlmuth, H. Knapp, M. Wurzer, M. Rest","doi":"10.1109/SMIC.2003.1196673","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196673","url":null,"abstract":"Recently, CMOS has been demonstrated to be a viable technology for wireless communications and very-high-bit-rate broadband circuit design at over 10 Gb/s in highly integrated systems. This paper presents advances in circuit design which fully exploit the high-speed potential of a 0.13 /spl mu/m standard CMOS technology up to 40 Gb/s and 50 GHz. The combination of advanced circuit techniques and state-of-the-art fabrication-process technology results in continuing the upward shift of the frequency limits.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130192830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Network-oriented models of transmission line structures in MMICs mmic中传输线结构的面向网络模型
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196699
D. Lukashevich, P. Russer
{"title":"Network-oriented models of transmission line structures in MMICs","authors":"D. Lukashevich, P. Russer","doi":"10.1109/SMIC.2003.1196699","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196699","url":null,"abstract":"Further reduction of microwave monolithic integrated circuit (MMIC) dimensions will require multilayered wiring and transmission line structures with cross-sectional dimensions of the conductors in the order of micrometers. In order to achieve further reduction in conductor losses, copper is also considered for internal wiring. The exact modelling of the transmission properties of the line structures requires full-wave modelling of the electromagnetic field in the semiconductor and insulator regions as well as within the conductors. In this paper various transmission line structures have been analyzed using the mode matching (MM) approach. Based on the numerical simulation of the transmission lines equivalent network-oriented models (NOMs) are extracted.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114934832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monolithic, integrated high-Q inductors for RF applications 用于射频应用的单片集成高q电感器
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196681
B. Eisener, K. Buyuktas, A. Rugemer, H. Kebinger, C. Herzum
{"title":"Monolithic, integrated high-Q inductors for RF applications","authors":"B. Eisener, K. Buyuktas, A. Rugemer, H. Kebinger, C. Herzum","doi":"10.1109/SMIC.2003.1196681","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196681","url":null,"abstract":"This paper presents high-Q inductors processed on 500 Ohmcm silicon substrates using a mature three layer copper metallization. The fabricated inductors have been characterized with a wide banded Q maximum roughly centered at 2GHz. The maximum Q values range from Q/sub max/ = 14 for a 20nH inductor up to Q/sub max/ = 40 for a 0.5nH inductor. By means of a 1.5nH inductor the influence of metal line width and different metallization stacks on the Q value vs. frequency behavior is presented. One typical application for these inductors are integrated passive bandpass filters for mobile phone applications. We present an ESD stable H3-bandpass-filter for PCN/PCS-applications with a low insertion loss of -1.45dB and high 3rd harmonic suppression of at least -40dB. The circuit simulations have shown an excellent correlation to the S-parameter measurement data which avoid time consuming 3D field simulations leading to reduced time to market.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114460832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A comparison of 0.35-/spl mu/m CMOS image-reject mixer architectures for LV-LP operation 0.35-/spl mu/m CMOS图像抑制混频器体系结构的比较
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196677
A. Carrera, M. Rodriguez, G. Rohmer
{"title":"A comparison of 0.35-/spl mu/m CMOS image-reject mixer architectures for LV-LP operation","authors":"A. Carrera, M. Rodriguez, G. Rohmer","doi":"10.1109/SMIC.2003.1196677","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196677","url":null,"abstract":"Four non-calibrated image-reject mixer (IRM) architectures have been developed in a 0.35-/spl mu/m 3M2P digital CMOS process. A Weaver, Hartley, and their corresponding double-quadrature topologies have been implemented based on active mixers in order to compare them in terms of achievable image rejection (IR) and low-voltage, low-power operation as part of an ISM (Industrial Scientific Medical) 400-MHz fully Integrated CMOS transceiver for short-range biomedical applications. Monte Carlo simulations over process variation predict image rejection in the range of 65-75 dB for such low-current consumptions as 380-450 /spl mu/A at 1.8 V.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"2010 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114501282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A step-gate-oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications 一种用于中短程无线应用的射频功率放大器的阶梯栅氧化SOI MOSFET
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196662
X. Liao, K. Tsui, Haitao Liu, K.J. Chen, J. Sin
{"title":"A step-gate-oxide SOI MOSFET for RF power amplifiers in short- and medium-range wireless applications","authors":"X. Liao, K. Tsui, Haitao Liu, K.J. Chen, J. Sin","doi":"10.1109/SMIC.2003.1196662","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196662","url":null,"abstract":"We propose and demonstrate a low-cost CMOS-compatible step-gate-oxide (SGO) SOI MOSFET that is suitable for RF power amplifiers in short- and medium-range wireless applications. The device structure and fabrication are identical to those of the standard SOI MOS devices except that the gate oxide features a step structure that consists of a thin oxide region on the source side and a thick oxide region on the drain side. A well-designed and optimized SGO SOI MOSFET with appropriate thin/thick gate length ratio exhibits improved breakdown voltage without adverse effects on the drain current characteristics. The step-gate-oxide structure also features reduced gate capacitances, leading to higher cutoff frequencies. The SGO MOSFET power amplifiers can be integrated with other CMOS-based RF blocks for single-chip RF transceivers.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121098194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Consistent simulation of bandgap narrowing in SiGe HBTs SiGe HBTs带隙缩小的一致性模拟
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196698
Yun Shi, G. Niu, J. Cressler
{"title":"Consistent simulation of bandgap narrowing in SiGe HBTs","authors":"Yun Shi, G. Niu, J. Cressler","doi":"10.1109/SMIC.2003.1196698","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196698","url":null,"abstract":"This work investigates the modeling of heavy doping induced bandgap narrowing (BGN) in highly scaled SiGe HBTs. An inconsistency between simulated results obtained using either Boltzmann or Fermi-Dirac statistics is identified for two widely used commercial device simulators: MEDICI and DESSIS. A new approach to BGN modeling is introduced to correct the problem. The impact of the distribution of BGN between the conduction band and the valence band on the simulated cut-off frequency in SiGe HBTs is also addressed.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115236568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 2 GHz 2 mW SiGe BiCMOS frequency divider with new latch-based structure 一种新型锁存器结构的2ghz 2mw SiGe BiCMOS分频器
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196675
O. Mazouffre, J. Bégueret, Andreia Cathelin, Didier Belot, Y. Deval, I. Bjtroductton
{"title":"A 2 GHz 2 mW SiGe BiCMOS frequency divider with new latch-based structure","authors":"O. Mazouffre, J. Bégueret, Andreia Cathelin, Didier Belot, Y. Deval, I. Bjtroductton","doi":"10.1109/SMIC.2003.1196675","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196675","url":null,"abstract":"A low power (2 mW) 2 GHz BiCMOS divider dedicated to UNITS is presented. The divider uses a new latch-based structure to obtain a division-by-4 with only two low-speed D-latches. The modulus can be 64 or 72 by the use of phase switching between the different quadrature outputs. The core of the programmable divider fabricated in 0.25 /spl mu/m STMicroelectronics SiGe BiCMOS technology occupies 0.025 mm/sup 2/ and consumes 1.3 mA at 1.5 V. The residual phase noise at the output is less than -100 dBc/Hz at an offset of 1 kHz from the carrier.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115529265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A novel micromachined planar filter on Si substrate at 45 GHz based on electromagnetic bandgap structures for wireless applications 一种基于电磁带隙结构的45 GHz硅衬底微机械平面滤波器
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196692
T. Euler, J. Papapolymerou
{"title":"A novel micromachined planar filter on Si substrate at 45 GHz based on electromagnetic bandgap structures for wireless applications","authors":"T. Euler, J. Papapolymerou","doi":"10.1109/SMIC.2003.1196692","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196692","url":null,"abstract":"A novel micromachined 2-pole Chebyshev filter at 45 GHz with 1.4% 0.2 dB equiripple bandwidth and 3.8 dB loss using coupled defects in a periodic electromagnetic bandgap structure (EBG) is presented in this paper. The periodic bandgap structure is realized on a 400 /spl mu/m thick high-resistivity silicon wafer using deep reactive ion etching techniques. The filter can be accessed via coplanar waveguide feeds. We first describe the geometrical, physical, and electrical characteristics of the periodic structures and then present simulated and measured results for the filter. The filter is simulated with the Finite Element Method (FEM). The measurements agree fairly well with the simulations.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115818439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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