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2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.最新文献

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Geometry-dependent low-frequency noise variations in 120 GHz f/sub T/ SiGe HBTs 120 GHz f/sub T/ SiGe HBTs的几何相关低频噪声变化
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196668
J. Johansen, Z. Jin, J. Cressler, A. Joseph
{"title":"Geometry-dependent low-frequency noise variations in 120 GHz f/sub T/ SiGe HBTs","authors":"J. Johansen, Z. Jin, J. Cressler, A. Joseph","doi":"10.1109/SMIC.2003.1196668","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196668","url":null,"abstract":"The influence of aggressive geometrical scaling on the variation of low-frequency noise in 120 GHz peak f/sub T/ UHV/CVD SiGe HBTs is presented for the first time. The noise variation shows a strong dependence on transistor geometry and little dependence on bias conditions. Our previous noise theory is used to understand this behavior, and a comparison is made between these new results and our prior results on 90 GHz peak f/sub T/ generation SiGe technology.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120904541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Si Schottky sampling bridge circuits for demultiplexer 解复用器的Si肖特基采样桥电路
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196688
J. Choi, C. Weiske, G. Olbrich, P. Russer
{"title":"Si Schottky sampling bridge circuits for demultiplexer","authors":"J. Choi, C. Weiske, G. Olbrich, P. Russer","doi":"10.1109/SMIC.2003.1196688","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196688","url":null,"abstract":"In this paper, we present a Si Schottky diode sampling bridge circuit for demultiplexer using flip-chip technology on alumina substrate(Al/sub 2/O/sub 3/). A Si Schottky diode is modeled using the Root diode model up to 40 GHz. Flip-chip interconnections are simulated using 3 dimensional electromagnetic simulator, Ansoft HFSS. Using those models, the sampling bridge circuits are designed and experimentally investigated. A sampling phenomena is confirmed observing the measurement waveform.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124794348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A manufacturable 0.35 /spl mu/m 150 GHz f/sub T/ SiGe:C bipolar RF technology 可制造的0.35 /spl mu/m 150 GHz f/sub T/ SiGe:C双极射频技术
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196656
M. Schwerd, M. Seck, T. Huttner, T. Bottner, S. Drexl, B. Hasler, A. Mitchell, H. Heineder, H. Korner, V. Kubrak, M. Schrenk, R. Lachner
{"title":"A manufacturable 0.35 /spl mu/m 150 GHz f/sub T/ SiGe:C bipolar RF technology","authors":"M. Schwerd, M. Seck, T. Huttner, T. Bottner, S. Drexl, B. Hasler, A. Mitchell, H. Heineder, H. Korner, V. Kubrak, M. Schrenk, R. Lachner","doi":"10.1109/SMIC.2003.1196656","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196656","url":null,"abstract":"Intensive world wide development work in high-speed bipolar RF technologies leads to a rapid increase in transistor performance. This paper describes a manufacturable leading-edge 0.35 /spl mu/m bipolar SiGe:C technology offering balanced transistor parameter sets with more than 150 GHz f/sub T/ and 180 GHz f/sub max/ as well as further integrated active and passive devices to serve a broad spectrum of applications.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125166291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High speed Si/SiGe and Ge/SiGe MODFETs
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196661
F. Aniel, M. Enciso-Aguilar, N. Zerounian, P. Crozat, R. Adde, T. Hackbarth, J. Herzog, U. Konig
{"title":"High speed Si/SiGe and Ge/SiGe MODFETs","authors":"F. Aniel, M. Enciso-Aguilar, N. Zerounian, P. Crozat, R. Adde, T. Hackbarth, J. Herzog, U. Konig","doi":"10.1109/SMIC.2003.1196661","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196661","url":null,"abstract":"The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129201140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Resonance phase operation of bipolar transistors 双极晶体管的谐振相位运算
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196660
H. Jorke, M. Schafer
{"title":"Resonance phase operation of bipolar transistors","authors":"H. Jorke, M. Schafer","doi":"10.1109/SMIC.2003.1196660","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196660","url":null,"abstract":"This work deals with the amplification scheme of resonance phase operation. For simplicity, the coherent transistor is used for its explanation. It is an ideal transistor model with a transport factor given by /spl alpha/ = exp (-/spl omega//spl tau//sub EC/). The transistor shows periodic resonances In Its current amplification at frequencies f/sub n,curr/ = n//spl tau//sub EC/. Additionally, the output of the transistor is found to operate as a reflection amplifier, where the centres: of the amplification are located close to f/sub n,refl/ = (n-1/4)//spl tau//sub EC/. Prospects of implementation of the new amplification scheme in silicon based bipolar technology are shown by numerical simulation using the 2-D simulator BLAZE from Silvaco.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114107161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Assessment of ferromagnetic integrated inductors for Si-technology 硅技术铁磁集成电感器的评价
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196679
B. Rejaei, M. Vroubel, Y. Zhuang, J. Burghartz
{"title":"Assessment of ferromagnetic integrated inductors for Si-technology","authors":"B. Rejaei, M. Vroubel, Y. Zhuang, J. Burghartz","doi":"10.1109/SMIC.2003.1196679","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196679","url":null,"abstract":"Recent experimental results for integrated magnetic inductors for radio frequency (RF) applications are reviewed. The effects of eddy-current loss in the conductive ferromagnetic film, permeability anisotropy, and inductor geometry on the inductance of magnetic inductors are discussed using several examples.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129058646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
RF-MEMS components for broadband applications 用于宽带应用的RF-MEMS组件
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196696
B. Schauwecker, K. Strohm, W. Simon, J. Luy
{"title":"RF-MEMS components for broadband applications","authors":"B. Schauwecker, K. Strohm, W. Simon, J. Luy","doi":"10.1109/SMIC.2003.1196696","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196696","url":null,"abstract":"Key elements for switching matrices are reported. Single RF-MEMS toggle switches yield an insertion loss of 0.2 dB @ 30 GHz and an isolation of 25dB @ 30 GHz. Shielded RF crosses for routing the signal path in the switching matrix yield an insertion loss of 0.75dB @ 20 GHz in the under-cross path and 0.6 dB (simulated) in the over-cross path with an isolation higher than 40dB between under- and over-cross path. Double 90 degree bends with compensated air-bridges show an insertion loss of less than 0.1dB up to 20 GHz.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129316797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Spatial distribution of microscopic noise contributions in SiGe HBTs SiGe HBTs中微观噪声贡献的空间分布
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196697
Yan Cui, G. Niu, Yun Shi, D. Harame
{"title":"Spatial distribution of microscopic noise contributions in SiGe HBTs","authors":"Yan Cui, G. Niu, Yun Shi, D. Harame","doi":"10.1109/SMIC.2003.1196697","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196697","url":null,"abstract":"This paper presents a new technique of simulating the spatial distribution of microscopic noise contribution to the input noise current, voltage, and their correlation. The technique is demonstrated on a 50 GHz SiGe HBT. A strong \"noise crowding\" effect is observed in the spatial distribution of noise concentrations due to base majority holes. The spatial distributions by base majority holes, base minority electrons, and emitter minority holes are analyzed, and compared to the compact noise model.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125913713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Device scaling and application trends for over 200GHz SiGe HBTs 超过200GHz SiGe hbt的设备缩放和应用趋势
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196655
G. Freeman, J. Rieh, B. Jagannathan, Zhijian Yang, F. Guarín, A. Joseph
{"title":"Device scaling and application trends for over 200GHz SiGe HBTs","authors":"G. Freeman, J. Rieh, B. Jagannathan, Zhijian Yang, F. Guarín, A. Joseph","doi":"10.1109/SMIC.2003.1196655","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196655","url":null,"abstract":"We discuss issues and solutions for scaling of SiGe HBT devices through f/sub T/ = 350GHz. Trends in peak f/sub T/ current density J/sub CP/ and avalanche multiplication M-I are shown for devices with f/sub T/ ranging from 50GHz to 350GHz, and discussed in the context of device operation and reliability. The over 10/spl times/ current density increase observed across this f/sub T/ range may be managed by reducing emitter width and maintaining a low device thermal resistance. We show that the over 20/spl times/ avalanche current increase must be accompanied by a reduction in base resistance to maintain sufficiently high instability voltage. We also discuss the degradation from avalanche hot carriers and find this acceptable looking forward. From the circuit point of view, reversal in base current resulting from avalanche must be managed in the model and in the circuit design.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126862831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A switched-LNA in 0.18 /spl mu/m CMOS for Bluetooth applications 用于蓝牙应用的0.18 /spl mu/m CMOS开关lna
2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI: 10.1109/SMIC.2003.1196674
F. Krug, P. Russer, F. Beffa, W. Bachtold, U. Lott
{"title":"A switched-LNA in 0.18 /spl mu/m CMOS for Bluetooth applications","authors":"F. Krug, P. Russer, F. Beffa, W. Bachtold, U. Lott","doi":"10.1109/SMIC.2003.1196674","DOIUrl":"https://doi.org/10.1109/SMIC.2003.1196674","url":null,"abstract":"A 2.45 GHz switched low-noise amplifier (LNA), intended for use in an integrated Bluetooth receiver, was implemented in a standard 0.18 /spl mu/m CMOS process. The LNA is optimized for a fully integrated mixer stage, with a mixer-input capacitance of 150 fF. The amplifier provides a switchable gain (|S/sub 21/|/sup 2/) of 7 dB/-17 dB with a noise figure (NF) of 3 dB in a 50 /spl Omega/ measurement environment. The power consumption is 7.6 mW from a 1.8 V supply. The die area of the LNA is 0.79 mm/sup 2/.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126007136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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