{"title":"Resonance phase operation of bipolar transistors","authors":"H. Jorke, M. Schafer","doi":"10.1109/SMIC.2003.1196660","DOIUrl":null,"url":null,"abstract":"This work deals with the amplification scheme of resonance phase operation. For simplicity, the coherent transistor is used for its explanation. It is an ideal transistor model with a transport factor given by /spl alpha/ = exp (-/spl omega//spl tau//sub EC/). The transistor shows periodic resonances In Its current amplification at frequencies f/sub n,curr/ = n//spl tau//sub EC/. Additionally, the output of the transistor is found to operate as a reflection amplifier, where the centres: of the amplification are located close to f/sub n,refl/ = (n-1/4)//spl tau//sub EC/. Prospects of implementation of the new amplification scheme in silicon based bipolar technology are shown by numerical simulation using the 2-D simulator BLAZE from Silvaco.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2003.1196660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This work deals with the amplification scheme of resonance phase operation. For simplicity, the coherent transistor is used for its explanation. It is an ideal transistor model with a transport factor given by /spl alpha/ = exp (-/spl omega//spl tau//sub EC/). The transistor shows periodic resonances In Its current amplification at frequencies f/sub n,curr/ = n//spl tau//sub EC/. Additionally, the output of the transistor is found to operate as a reflection amplifier, where the centres: of the amplification are located close to f/sub n,refl/ = (n-1/4)//spl tau//sub EC/. Prospects of implementation of the new amplification scheme in silicon based bipolar technology are shown by numerical simulation using the 2-D simulator BLAZE from Silvaco.