{"title":"解复用器的Si肖特基采样桥电路","authors":"J. Choi, C. Weiske, G. Olbrich, P. Russer","doi":"10.1109/SMIC.2003.1196688","DOIUrl":null,"url":null,"abstract":"In this paper, we present a Si Schottky diode sampling bridge circuit for demultiplexer using flip-chip technology on alumina substrate(Al/sub 2/O/sub 3/). A Si Schottky diode is modeled using the Root diode model up to 40 GHz. Flip-chip interconnections are simulated using 3 dimensional electromagnetic simulator, Ansoft HFSS. Using those models, the sampling bridge circuits are designed and experimentally investigated. A sampling phenomena is confirmed observing the measurement waveform.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Si Schottky sampling bridge circuits for demultiplexer\",\"authors\":\"J. Choi, C. Weiske, G. Olbrich, P. Russer\",\"doi\":\"10.1109/SMIC.2003.1196688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a Si Schottky diode sampling bridge circuit for demultiplexer using flip-chip technology on alumina substrate(Al/sub 2/O/sub 3/). A Si Schottky diode is modeled using the Root diode model up to 40 GHz. Flip-chip interconnections are simulated using 3 dimensional electromagnetic simulator, Ansoft HFSS. Using those models, the sampling bridge circuits are designed and experimentally investigated. A sampling phenomena is confirmed observing the measurement waveform.\",\"PeriodicalId\":332696,\"journal\":{\"name\":\"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2003.1196688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2003.1196688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Si Schottky sampling bridge circuits for demultiplexer
In this paper, we present a Si Schottky diode sampling bridge circuit for demultiplexer using flip-chip technology on alumina substrate(Al/sub 2/O/sub 3/). A Si Schottky diode is modeled using the Root diode model up to 40 GHz. Flip-chip interconnections are simulated using 3 dimensional electromagnetic simulator, Ansoft HFSS. Using those models, the sampling bridge circuits are designed and experimentally investigated. A sampling phenomena is confirmed observing the measurement waveform.