A switched-LNA in 0.18 /spl mu/m CMOS for Bluetooth applications

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196674

F. Krug, P. Russer, F. Beffa, W. Bachtold, U. Lott

引用次数: 10

Abstract

A 2.45 GHz switched low-noise amplifier (LNA), intended for use in an integrated Bluetooth receiver, was implemented in a standard 0.18 /spl mu/m CMOS process. The LNA is optimized for a fully integrated mixer stage, with a mixer-input capacitance of 150 fF. The amplifier provides a switchable gain (|S/sub 21/|/sup 2/) of 7 dB/-17 dB with a noise figure (NF) of 3 dB in a 50 /spl Omega/ measurement environment. The power consumption is 7.6 mW from a 1.8 V supply. The die area of the LNA is 0.79 mm/sup 2/.

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用于蓝牙应用的0.18 /spl mu/m CMOS开关lna

用于集成蓝牙接收器的2.45 GHz开关低噪声放大器(LNA)采用标准的0.18 /spl mu/m CMOS工艺实现。LNA针对完全集成的混频器级进行了优化，混频器输入电容为150 fF。放大器提供7 dB/-17 dB的可切换增益(|S/sub 21/|/sup 2/)，在50 /spl ω /测量环境下噪声系数(NF)为3 dB。1.8 V电源的功耗为7.6 mW。LNA的模具面积为0.79 mm/sup 2/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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