2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.
Pub Date : 2003-04-11
DOI:10.1109/SMIC.2003.1196661
引用次数: 3
摘要
综述了基于n- sige和p-SiGe的modfet的高频和噪声性能。其优异的高频和低噪声性能使其非常适合射频移动通信。讨论了它们的物理建模、设计优化和自热效应。本文章由计算机程序翻译，如有差异，请以英文原文为准。
High speed Si/SiGe and Ge/SiGe MODFETs
The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.
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