120 GHz f/sub T/ SiGe HBTs的几何相关低频噪声变化

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196668

J. Johansen, Z. Jin, J. Cressler, A. Joseph

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引用次数: 7

摘要

首次研究了冲击几何尺度对120 GHz峰值f/sub / UHV/CVD SiGe hbt低频噪声变化的影响。噪声的变化与晶体管的几何形状有很大的关系，而与偏置条件的关系很小。我们使用之前的噪声理论来理解这种行为，并将这些新结果与我们之前在90 GHz峰值f/sub T/一代SiGe技术上的结果进行了比较。

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Geometry-dependent low-frequency noise variations in 120 GHz f/sub T/ SiGe HBTs

The influence of aggressive geometrical scaling on the variation of low-frequency noise in 120 GHz peak f/sub T/ UHV/CVD SiGe HBTs is presented for the first time. The noise variation shows a strong dependence on transistor geometry and little dependence on bias conditions. Our previous noise theory is used to understand this behavior, and a comparison is made between these new results and our prior results on 90 GHz peak f/sub T/ generation SiGe technology.

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2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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