Spatial distribution of microscopic noise contributions in SiGe HBTs

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196697

Yan Cui, G. Niu, Yun Shi, D. Harame

引用次数: 1

Abstract

This paper presents a new technique of simulating the spatial distribution of microscopic noise contribution to the input noise current, voltage, and their correlation. The technique is demonstrated on a 50 GHz SiGe HBT. A strong "noise crowding" effect is observed in the spatial distribution of noise concentrations due to base majority holes. The spatial distributions by base majority holes, base minority electrons, and emitter minority holes are analyzed, and compared to the compact noise model.

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SiGe HBTs中微观噪声贡献的空间分布

本文提出了一种模拟微观噪声对输入噪声电流、电压的空间分布及其相关关系的新技术。该技术在50 GHz SiGe HBT上进行了验证。由于基多数孔洞的存在，在噪声浓度的空间分布中观察到强烈的“噪声拥挤”效应。分析了基极多数空穴、基极少数电子和发射极少数空穴的空间分布，并与紧凑噪声模型进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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