可制造的0.35 /spl mu/m 150 GHz f/sub T/ SiGe:C双极射频技术

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196656

M. Schwerd, M. Seck, T. Huttner, T. Bottner, S. Drexl, B. Hasler, A. Mitchell, H. Heineder, H. Korner, V. Kubrak, M. Schrenk, R. Lachner

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引用次数: 6

摘要

世界范围内对高速双极射频技术的密集开发工作导致了晶体管性能的快速提高。本文介绍了一种可制造的领先的0.35 /spl mu/m双极SiGe:C技术，提供超过150 GHz f/sub T/和180 GHz f/sub max/的平衡晶体管参数集，以及进一步集成的有源和无源器件，以服务于广泛的应用。

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A manufacturable 0.35 /spl mu/m 150 GHz f/sub T/ SiGe:C bipolar RF technology

Intensive world wide development work in high-speed bipolar RF technologies leads to a rapid increase in transistor performance. This paper describes a manufacturable leading-edge 0.35 /spl mu/m bipolar SiGe:C technology offering balanced transistor parameter sets with more than 150 GHz f/sub T/ and 180 GHz f/sub max/ as well as further integrated active and passive devices to serve a broad spectrum of applications.

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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