用于宽带应用的RF-MEMS组件

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196696

B. Schauwecker, K. Strohm, W. Simon, J. Luy

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引用次数: 3

摘要

报告了切换矩阵的关键元件。单个RF-MEMS拨动开关的插入损耗为0.2 dB @ 30 GHz，隔离度为25dB @ 30 GHz。用于在开关矩阵中路由信号路径的屏蔽RF交叉在下交叉路径中产生0.75dB @ 20ghz的插入损耗，在上交叉路径中产生0.6 dB(模拟)的插入损耗，下交叉路径和上交叉路径之间的隔离度高于40dB。双90度弯曲补偿气桥显示插入损耗小于0.1dB高达20 GHz。

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RF-MEMS components for broadband applications

Key elements for switching matrices are reported. Single RF-MEMS toggle switches yield an insertion loss of 0.2 dB @ 30 GHz and an isolation of 25dB @ 30 GHz. Shielded RF crosses for routing the signal path in the switching matrix yield an insertion loss of 0.75dB @ 20 GHz in the under-cross path and 0.6 dB (simulated) in the over-cross path with an isolation higher than 40dB between under- and over-cross path. Double 90 degree bends with compensated air-bridges show an insertion loss of less than 0.1dB up to 20 GHz.

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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