RF-MEMS components for broadband applications

Abstract

Key elements for switching matrices are reported. Single RF-MEMS toggle switches yield an insertion loss of 0.2 dB @ 30 GHz and an isolation of 25dB @ 30 GHz. Shielded RF crosses for routing the signal path in the switching matrix yield an insertion loss of 0.75dB @ 20 GHz in the under-cross path and 0.6 dB (simulated) in the over-cross path with an isolation higher than 40dB between under- and over-cross path. Double 90 degree bends with compensated air-bridges show an insertion loss of less than 0.1dB up to 20 GHz.