终端阻抗对5ghz CMOS射频放大器线性度的影响分析

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196704

J. Fairbanks, L. Larson

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引用次数: 2

摘要

分析了小信号CMOS共源放大级的高频非线性失真与5 GHz时偏置和终端阻抗的关系。研究结果可应用于无线射频电路设计。

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Analysis of termination impedance effects on the linearity of 5 GHz CMOS radio frequency amplifiers

The high-frequency nonlinear distortion of a small-signal CMOS common-source amplifier stage is analyzed as a function of bias and termination impedance at 5 GHz. The results developed can be applied to wireless RF circuit design applications.

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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