Wafer level packaging solution for high performance microwave inductors on Si substrates

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196693

S. Nuttinck, S. Pinel, J. Laskar

引用次数: 2

Abstract

We report an innovative wafer level packaging solution for high performance microwave inductors on Si substrates. We present design rules for high-Q microwave inductors. Inductors fabricated on Si substrates using this technology exhibit Q's up to 50 in the C-band.

查看原文本刊更多论文

硅基板上高性能微波电感的晶圆级封装解决方案

我们报告了一种创新的晶圆级封装解决方案，用于硅基板上的高性能微波电感器。提出了高q微波电感器的设计原则。使用该技术在Si衬底上制造的电感在c波段的Q值高达50。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

自引率

0.00%

发文量