Scaleable non linear low frequency noise model of SiGe HBT

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196702

A. Rennane, L. Bary, G. Niu, J. Cressler, J. Joseph, J. Graffeuil, R. Plana

引用次数: 1

Abstract

This paper presents the low frequency noise behavior of advanced SiGe HBT's. It is investigated the influence of the Ge rate on the low frequency noise properties. We propose a scaleable non linear model that is compatible with commercial CAD platform.

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SiGe HBT的可缩放非线性低频噪声模型

本文介绍了先进的SiGe型高压晶体管的低频噪声特性。研究了锗率对其低频噪声特性的影响。我们提出了一个可扩展的非线性模型，该模型与商业CAD平台兼容。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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