用于MEMS开关矩阵的隔离共面RE交叉的电磁设计

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196695

W. Simon, A. Lauer, B. Schauwecker, A. Wien

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引用次数: 5

摘要

描述了在直流至40ghz频率范围内具有良好隔离信号路径的共面射频交叉器的电磁设计。十字是为MEMS开关矩阵设计的，其中不同的信号路径必须相互隔离。这允许在矩阵中同时有几个“on-state”信号路径。一个信号路径通过通道下金属化布线，而另一个信号路径通过气桥布线。连接两个共面接地金属层的金属片用作屏蔽，以实现良好的隔离。交叉的所有元素的优化是用全波FDTD模拟器完成的。共面射频交叉的两个信号路径之间实现的隔离度在40 dB以上，最高可达40 GHz。对于这两种信号路径，在高达20 GHz频率的测量和仿真中，回波损耗优于18 dB，插入损耗低于0.7 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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EM design of an isolated coplanar RE cross for MEMS switch matrix applications

The EM design of a coplanar RF cross with well isolated signal paths in a frequency range from DC up to 40 GHz is described. The cross is designed for a MEMS switch matrix where the different signal paths have to be isolated against each other. This allows one to have several 'on-state' signal paths at the same time in the matrix. One signal path is routed via an underpath metallisation while the other signal path is routed with an air bridge. A metal sheet connecting both coplanar ground metallisations is used as a shield to achieve good isolation. The optimisation of all elements from the cross is done with a full wave FDTD simulator. The achieved isolation between the two signal paths of the coplanar RF cross is above 40 dB up to 40 GHz. For both signal paths is in measurement and simulation for frequencies up to 20 GHz the return loss better than 18 dB and the insertion loss is below 0.7 dB.

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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