{"title":"A hybrid fabricated 40 GHz low phase noise SiGe push-push oscillator","authors":"R. Wanner, G. Olbrich","doi":"10.1109/SMIC.2003.1196672","DOIUrl":null,"url":null,"abstract":"We present a 40 GHz push-push oscillator based on SiGe HBTs. The circuit is fabricated in thin film technology on an alumina substrate. It provides an output power of -9 dBm at 40 GHz and two differential outputs with -6 dBm each at the fundamental frequency of 20 GHz. The oscillator shows an excellent phase noise performance and reaches -108 dBc/Hz at the second harmonic frequency of 40 GHz and -114 dBc/Hz at the fundamental frequency of 20 GHz Both values are measured at an offset frequency of I MHz.","PeriodicalId":332696,"journal":{"name":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2003.1196672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
We present a 40 GHz push-push oscillator based on SiGe HBTs. The circuit is fabricated in thin film technology on an alumina substrate. It provides an output power of -9 dBm at 40 GHz and two differential outputs with -6 dBm each at the fundamental frequency of 20 GHz. The oscillator shows an excellent phase noise performance and reaches -108 dBc/Hz at the second harmonic frequency of 40 GHz and -114 dBc/Hz at the fundamental frequency of 20 GHz Both values are measured at an offset frequency of I MHz.