采用商用SiGe HBT MMIC代工技术的24ghz高灵敏度下变频器

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. Pub Date : 2003-04-11 DOI:10.1109/SMIC.2003.1196671

E. Sonmez, A. Trasser, P. Abele, F. Gruson, K. Schad, H. Schumacher

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引用次数: 5

摘要

作者展示了一种集成的下变频器，采用标准SiGe HBT MMIC工艺，有效发射极宽度为0.5 /spl mu/m，可寻址ism频段的24 GHz。极其紧凑的电路布局和晶体管结构优化应用于成熟的Si/SiGe技术，从而产生低成本集成电路，使24 GHz ISM频段的面向消费者的系统成为可能。集成的组件是前置放大器和带中频缓冲器的混频器。对于100 MHz的中频，转换增益确定为40 dB。

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24 GHz high sensitivity downconverter using a commercial SiGe HBT MMIC foundry technology

The authors have demonstrated an integrated downconverter addressing the ISM-band at 24 GHz using a standard SiGe HBT MMIC process with an effective emitter width of 0.5 /spl mu/m. Extremely compact circuit layout and transistor structure optimization are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at the 24 GHz ISM band. The integrated components are a preamplifier and a mixer with an IF buffer. The conversion gain is determined to be 40 dB for an intermediate frequency of 100 MHz.

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来源期刊

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

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