RF-Schottky diodes with Ni silicide for mixer applications

Abstract

In this paper n- and p-doped Schottky diode with NiSi (nickel silicide) as contact material will be compared with Schottky diodes with Al (aluminum) contact. It is shown that a useable p-doped Schottky diode with high cut-off frequency could be achieved if nickel silicide is used as contact material. Also is proved that nickel silicide, if used as contact material, decreases the series resistance in cause of a reduced contact resistance.