Noise performance scaling in high-speed silicon RF technologies

Abstract

SiGe HBT technology has evolved rapidly during the past several years through both scaling and structural enhancements, with each contributing to improved low-noise performance. Vertical scaling has increased f/sub T/ by 4/spl times/ between the 0.5 /spl mu/m and 0.13/spl mu/m generations, contributing to a 2.5 dB drop in noise figure at 26 GHz. At the same time, both lateral scaling as well as the move to a raised-extrinsic-base structure have reduced R/sub B/ by 4.5/spl times/, contributing an additional 1 dB F/sub min/ drop. The resulting 200GHz SiGe HBT achieves F/sub min/ and G/sub A/ values of 1.1 dB and 9 dB at 26 GHz, respectively, with a projected F/sub min/ of 3.1-3.5 dB at 60 GHz. Such performance suggests that silicon enjoys great potential to serve a range of emerging wireless applications at high frequencies.